X-On Electronics has gained recognition as a prominent supplier of BGB741L7ESDE6327XTSA1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGB741L7ESDE6327XTSA1 RF Amplifier are a product manufactured by Infineon. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGB741L7ESDE6327XTSA1 Infineon

BGB741L7ESDE6327XTSA1 electronic component of Infineon
BGB741L7ESDE6327XTSA1 Infineon
BGB741L7ESDE6327XTSA1 RF Amplifier
BGB741L7ESDE6327XTSA1  Semiconductors

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See Product Specifications
Part No. BGB741L7ESDE6327XTSA1
Manufacturer: Infineon
Category: RF Amplifier
Description: High-Performance Broad Band LNA MMIC 6-Pin TSLP EP T/R
Datasheet: BGB741L7ESDE6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7500: USD 0.6376 ea
Line Total: USD 4782 
Availability - 7275
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 7500  Multiples: 7500
Pack Size: 7500
Availability Price Quantity
29
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 1.9679
10 : USD 1.6301
30 : USD 1.1153
100 : USD 0.954
500 : USD 0.8828
1000 : USD 0.8491
2000 : USD 0.8397

7275
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 7500
Multiples : 7500
7500 : USD 0.6376
15000 : USD 0.5311

2895
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 51
Multiples : 1
51 : USD 1.2725
55 : USD 1.1814
100 : USD 1.0189
200 : USD 0.962
1000 : USD 0.8329

   
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We are delighted to provide the BGB741L7ESDE6327XTSA1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGB741L7ESDE6327XTSA1 and other electronic components in the RF Amplifier category and beyond.

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BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Product description The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineons silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure NF = 1.05 dB at 2.4 GHz, 3 V, 10 mA min Supply voltage range V = 1.8 to 4.0 V at T = 25 C CC A High RF input power robustness of 20 dBm Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVB- Terrestrial Device information Table 1 Part information Product name / Package Pin configuration Marking Pieces / Reel Ordering code BGB741L7ESD / TSLP-7-1 1 = V 2 = V 3 = RF 4 = RF AY 7500 CC Bias in out BGB741L7ESDE6327XTSA1 5 = V 6 = Current 7 = Ground Ctrl adjust Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v3.0 www.infineon.com 2018-09-26BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying V . By using an external resistor R , the pre-set current of 5.5 mA (when R is Ctrl ext ext omitted) can be increased. Base V and collector V voltages are applied to the respective pins RF and RF by B C in out external inductors L and L . B C DC, R ext V CC 6 5 4 1 6 internal V Current Adjust CC Biasing 2 5 7 LB Bias-Out On/Off In LC Out DC, 3 4 V ctrl RF-In RF-Out C C 1 2 3 in out GND 7 (on package backside) BGB7XXL7ESD functional block Figure 1 Functional block diagram Datasheet 2 v3.0 2018-09-26

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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