Smart High-Side Power Switch BSP452 High-side switch Short-circuit protection SOT-223 Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load Clamp of negative output voltage with inductive loads 1 Undervoltage shutdown SOT-223 Maximum current internally limited Electrostatic discharge (ESD) protection 1 ) Reverse battery protection PG-SOT-223 AEC qualified Package: SOT 223 Green product (RoHS compliant) Type Ordering code BSP 452 Q67000-S271 Application C compatible power switch for 12 V DC grounded loads All types of resistive, inductive and capacitive loads Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: + V bb 4 Voltage Gate Overvoltage Current source protection limit protection V ESD- Logic Diode OUT Charge pump Limit for Voltage unclamped 1 Level shifter sensor Temperature ind. loads sensor Rectifier R in 3 IN Load ESD Logic miniPROFET GND 2 Load GND Signal GND 1 ) With resistor R =150 in GND connection, resistor in series with IN connections reverse load current GND limited by connected load. Data Sheet 1 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Pin Symbol Function 1 OUT O Output to the load 2 GND - Logic ground 3 IN I Input, activates the power switch in case of logical high signal 4 Vbb + Positive power supply voltage Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Values Unit Supply voltage V 40 V bb Load current self-limited I I A L L(SC) 2 ) Maximum input voltage V -5.0...V V IN bb Maximum input current I 5 mA IN Inductive load switch-off energy dissipation, E 0.5 J AS single pulse I T L = 0.5A , A = 150C (not tested, specified by design) 3 4 ) ) Load dump protection V =U +V R = 24 V 60 V LoadDump A s L Load dump R =2 , t =400ms, IN= low or high, U =13,5V R = 80 80 I d A L (not tested, specified by design) 5 ) Electrostatic discharge capability (ESD) PIN 3 V 1 kV ESD PIN 1,2,4 2 Operating temperature range T -40 ...+150 C j Storage temperature range T -55 ...+150 stg 6 ) Max. power dissipation (DC) T P 1.8 W A = 25 C tot Thermal resistance chip - soldering point: R 7 K/W thJS 6) chip - ambient: R 70 thJA 2 ) At V > V , the input current is not allowed to exceed 5 mA. IN bb 3 ) Supply voltages higher than V require an external current limit for the GND pin, e.g. with a 150 resistor in the GND connection bb(AZ) A resistor for the protection of the input is integrated. 4 ) V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Load dump 5 ) HBM according to MIL-STD 883D, Methode 3015.7 6 ) 2 BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm copper area for V connection bb Data Sheet 2 V1.0, 2007-05-25