X-On Electronics has gained recognition as a prominent supplier of BSP76E6433HUMA1 Power Switch ICs - Power Distribution across the USA, India, Europe, Australia, and various other global locations. BSP76E6433HUMA1 Power Switch ICs - Power Distribution are a product manufactured by Infineon. We provide cost-effective solutions for Power Switch ICs - Power Distribution, ensuring timely deliveries around the world.

BSP76E6433HUMA1 Infineon

BSP76E6433HUMA1 electronic component of Infineon
BSP76E6433HUMA1 Infineon
BSP76E6433HUMA1 Power Switch ICs - Power Distribution
BSP76E6433HUMA1  Semiconductors

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Part No. BSP76E6433HUMA1
Manufacturer: Infineon
Category: Power Switch ICs - Power Distribution
Description: Infineon Technologies Power Switch ICs - Power Distribution NPN Silicon AF TRANSISTOR
Datasheet: BSP76E6433HUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
80: USD 0.9854 ea
Line Total: USD 78.83 
Availability - 28712
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ: 80  Multiples: 1
Pack Size: 1
Availability Price Quantity
18185
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4896
10 : USD 1.0669
100 : USD 0.965
250 : USD 0.926
500 : USD 0.8924
1000 : USD 0.8723
4000 : USD 0.8723
8000 : USD 0.8723

92
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 62
Multiples : 1
62 : USD 1.2698
100 : USD 1.1165
250 : USD 1.081
500 : USD 1.035
1000 : USD 1.0157
4000 : USD 0.8961
8000 : USD 0.8766

3880
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 4000
Multiples : 4000
4000 : USD 1.7092

28712
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 80
Multiples : 1
80 : USD 0.9854
100 : USD 0.9833
200 : USD 0.9595
2000 : USD 0.9556
4000 : USD 0.8545

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the BSP76E6433HUMA1 from our Power Switch ICs - Power Distribution category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP76E6433HUMA1 and other electronic components in the Power Switch ICs - Power Distribution category and beyond.

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Smart Low Side Power Switch HITFET BSP 76 Product Summary Features Drain source voltage V 42 V Logic Level Input DS On-state resistance R 200 m Input Protection (ESD) DS(on) Nominal load current I 1.4 A Thermal shutdown with auto restart D(Nom) Clamping energy E 150 mJ Green product (RoHS compliant) AS Overload protection Short circuit protection 4 Overvoltage protection 3 Current limitation 2 Analog driving possible 1 VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Complete product spectrum and additional information Smart Low Side Power Switch HITFET BSP 76 Maximum Ratings at T = 25C, unless otherwise specified j Parameter Symbol Value Unit 42 V Drain source voltage V DS Supply voltage for full short circuit protection V 42 bb(SC) 1) 2) Continuous input voltage V -0.2 ... +10 IN 2) Continuous input current I mA IN -0.2V V 10V self limited IN V < -0.2V or V > 10V I 2 IN IN IN C Operating temperature T -40 ...+150 j -55 ... +150 Storage temperature T stg 5) Power dissipation P 3.8 W tot T = 85 C C 2) mJ Unclamped single pulse inductive energy E 150 AS 2)3) Load dump protection V = V + V V 50 V LoadDump A S LD V = 0 and 10 V, t = 400 ms, R = 2 , IN d I R = 9 ,V = 13.5 V L A 2) Electrostatic discharge voltage (Human Body Model) V 2 kV ESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance junction - ambient: R K/W thJA min. footprint 125 2 4) 6 cm cooling area 72 17 K/W junction-soldering point: R thJS 1 For input voltages beyond these limits I has to be limited. IN 2 not subject to production test, specified by design 3 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 4 2 (one layer, 70m thick) copper area for drain Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB mounted vertical without blown air. 5 not subject to production test, calculated by R and R thJA ds(on) Datasheet 2 Rev. 1.3, 2008-04-14

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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