HITFET - BTF3050TE BTF3050TE Smart Low-Side Power Switch 1Overview Application Suitable for resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits Most suitable for inductive loads as well as loads with inrush currents Features Single channel device Very low power DMOS leakage current in OFF state 3.3 V and 5 V compatible logic inputs PG-TO252-5 Electrostatic discharge protection (ESD) Adjustable switching speed Digital Feedback Green Product (RoHS compliant) AEC Qualified Description The BTF3050TE is a 50 m single channel Smart Low-Side Power Switch in a PG-TO252-5 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET. The device is monolithically integrated. The BTF3050TE is automotive qualified and is optimized for 12V automotive and industrial applications. Table 1 Product Summary Operating voltage range V 3 .. 28 V OUT Maximum load voltage V 40 V BAT(LD) Operating supply voltage range V 3.0 .. 5.5 V DD Maximum input voltage V 5.5 V IN Maximum On-State resistance at T = 150C, V = 5V R 100 m J DD DS(ON) Nominal load current I 3.0 A L(NOM) Minimum current limitation trigger level I 30 A L(LIM) TRIGGER Maximum OFF state load current at T 85 C I 2 A J L(OFF) Maximum stand-by supply current at T = 25 C I 6 A J DD(OFF) Type Package Marking BTF3050TE PG-TO252-5 Datasheet 1 Rev. 1.1, 2018-08-28 HITFET - BTF3050TE Smart Low-Side Power Switch Overview Diagnostic Functions Short circuit to battery Over temperature Stable latching diagnostic signal Protection Functions Over temperature shutdown with auto-restart Active clamp over voltage protection of the output Current limitation Enhanced short circuit protection Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by clamping energy (E ) AS and maximum current capabilities. The BTF3050TE offers dedicated ESD protection on the IN, VDD and SRP pins which refers to the Ground pin, as well as an over voltage clamping of the output to Source/GND. The over voltage protection gets activated during inductive turn off conditions or other over voltage events (e.g. load dump). The power MOSFET is limiting the drain-source voltage, if it rises above the V OUT(CLAMP). The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The BTF3050TE has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. Datasheet 2 Rev. 1.1, 2018-08-28