Smart Low Side Power Switch HITFET BTS 133TC Product Summary Features Drain source voltage 60 V V DS Logic Level Input On-state resistance 50 R m DS(on) Input Protection (ESD) Current limit 21 A I ( ) D lim =Thermal shutdown with latch Nominal load current 7 A I D(ISO) Short circuit and Overload protection Clamping energy 2000 mJ E AS Overvoltage protection Current limitation Status feedback with external input resistor Analog driving possible AEC qualified Green product (RoHS compliant) Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip tech- nology. Providing embedded protection functions. Vbb + LOAD M Drain 2 Overvoltage Current dv/dt 1 protection lim itation lim itation IN Over- Overload Short circuit temperature Short circuit ESD protection protection protection protection 3 Source HITFET Datasheet 1 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Value Unit Drain source voltage 60 V V DS 32 V Drain source voltage for short circuit protection DS(SC) 1) Continuous input current mA I IN -0.2V V 10V no limit IN V < -0.2V or V > 10V I 2 IN IN IN Operating temperature - 40 ... +150 C T j Storage temperature - 55 ... +150 T stg Power dissipation 90 W P tot T = 25 C C Unclamped single pulse inductive energy 2000 mJ E AS I = 7 A D(ISO) Electrostatic discharge voltage (Human Body Model) 3000 V V ESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 2) Load dump protection V = V + V V LoadDump A S LD V =low or high V =13.5 V IN A t = 400 ms, R = 2 ,I =0,5*7A 90 d I D t = 400 ms, R = 2 ,I = 7A 74 d I D Thermal resistance junction - case: 1.4 K/W R thJC junction - ambient: 75 R thJA 3) SMD version, device on PCB: R 45 thJA 1 In case of thermal shutdown a minimum sensor holding current of 500 A has to be guaranteed (see also page 3). 2 V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.0, 2009-07-20