HITFET - BTS3035TF Smart Low-Side Power Switch 1 Overview Basic Features Single channel device Very low output leakage current in OFF state Electrostatic discharge protection (ESD) Embedded protection functions (see below) Green Product (RoHS compliant) AEC Qualified Applications Suitable for resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits Description The BTS3035TF is a 35 m single channel Smart Low-Side Power Switch within a PG-TO252-3 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3035TF is automotive qualified and is optimized for 12 V automotive applications. Type Package Marking BTS3035TF PG-TO252-3 S3035TF Table1 Product Summary Operating voltage range V 0 .. 31 V OUT Maximum load voltage V 40 V BAT(LD) Maximum input voltage V 5.5 V IN Maximum On-State resistance at T = 150C, V = 5 V R 70 m J IN DS(ON) Nominal load current I 5A L(NOM) Minimum current limitation I 20 A L(LIM) Maximum OFF state load current at T 85C I 0.6 A J L(OFF) 85 Datasheet 1 Rev. 1.0 www.infineon.com/hitfet 2016-06-01 HITFET - BTS3035TF Smart Low-Side Power Switch Overview Protection Functions Over temperature shut-down with automatic-restart Active clamp over voltage protection Current limitation Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by maximum clamping energy and maximum current capabilities. The BTS3035TF offers ESD protection on the IN pin which refers to the Source pin (Ground). The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. The BTS3035TF has an auto-restart thermal shut-down function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The over voltage protection can be activated during load dump or inductive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it rises above the V OUT(CLAMP). Datasheet 2 Rev. 1.0 2016-06-01