Smart Low Side Power Switch BTS3256D 1 Overview Features Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation Max. switching Frequency 12 kHz Clear detection of digital fault signal also during fast PWM operation due to restart delay time Thermal and overload protection with time controlled auto restart behavior Time and Power limited active current limitation Minimum R achieved with 3.3 V or 5 V logic input DS(on) Electrostatic discharge protection (ESD) Very low leakage current Green Product (RoHS compliant) Digital Diagnostic Features Over temperature Over load Short circuit Clear detection due to a restart delay time Protection Functions Enhanced short circuit protection with time and power limited active current limitation Under voltage lock out Over temperature with time and temperature controlled auto restart Over load with power and time controlled auto restart ESD protection Potential Applications All types of resistive, inductive and capacitive loads Suitable for loads with inrush current, such as motors, coils, solenoids or lamps Suitable for EMC optimized switching in slow operation mode Suitable for higher speed PWM controlled loads in fast operation mode Replacement of electromechanical relays, fuses and discrete circuits Micro controller compatible low side power switch with digital feedback for 12 V loads Data Sheet 1 Rev. 1.1 www.infineon.com/HITFET 2017-07-27 Smart Low Side Power Switch BTS3256D Overview Description The BTS3256D is a single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. This HITFET is designed for automotive and industrial applications with outstanding protection and control features.The power transistor is a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. The BTS3256D is an autorestart single channel low-side power switch in PG-TO-252-5-11 package providing embedded protective functions. The device is able to switch all kind of resistive, inductive and capacitive loads. The ESD protection of the V and IN/Fault pin is referenced to GND. S The BTS3256D is supplied by the V Pin. This Pin should be connected to a reverse protected battery line. The S supply voltage is monitored by the under voltage lock out circuit. The Gate driving unit allows the device to operate in the lowest ohmic range independent of the input signal level, 3.3 V or 5 V . For slow PWM application the device offers smooth turn-on and off due to the embedded edge shaping function, to reduce EMC noise. Furthermore the SRP pin can be used to customize the slew rate of the device in a wide range. The Device is designed for driving automotive loads like motors,valves, coils or bulbs in continous or PWM mode. The over voltage protection is for protection during load-dump or inductive turn off conditions. The power MOSFET is limiting the Drain-Source voltage to a specified level. This function is available even without any supply. The over temperature protection prevents the device from overheating due to overload and/or bad cooling conditions. In order to reduce the device stress the edge shaping is disabled during thermal shutdown. After thermal shutdown the device stays off for the specified restart delay time to enable a clear feedback readout on the microcontroller. After this time the device follows the IN signal state. At high dynamic overload conditions, such as short circuit, the device will either turn off immediately due to the implemented over power limitation, or limit the current for a specified time and then switch off for the restart delay time. Shutdown of the device is triggered if the power dissipation during limitation is above the over power threshold. The short circuit shutdown is a timed restart function. The device will stay off for the specified time and afterwards follow the IN signal state. In order to reduce the device stress the edge shaping is disabled during protective turn off. Table1 Basic Electrical Data Operating voltage V 5.5 V.... 30 V SOP Over voltage protection V 40 V D(AZ) Maximum ON State resistance at Tj = 150C R 20 m DS(ON,max) Typical ON State resistance at Tj = 25C R 10 m DS(ON,typ) Nominal load current I 7.5 A D(nom) Minimum current limitation I 42 A D(lim) Type Package Marking BTS3256D PG-TO-252-5-11 BTS3256D Data Sheet 2 Rev. 1.1 2017-07-27