BTS3410GXUMA1 Infineon

Smart Low Side Power Switch HITFET BTS 3410G Product Summary Features Drain source voltage V 42 V Logic Level Input DS On-state resistance R 200 m Input Protection (ESD) DS(on) Nominal load current I 1.3 A Thermal shutdown with auto restart D(Nom) Clamping energy E 150 mJ Green product (RoHS compliant) AS Overload protection Short circuit protection Overvoltage protection Current limitation Analog driving possible Application All kinds of resistive, inductive and capacitive loads in switching or linear applications C compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain1 HITFET Pin 7and 8 In1 Logic Pin 2 Channel 1 Pin 1 Source1 Drain2 Pin 5and 6 In2 Logic Pin 4 Channel 2 Pin 3 Source2 Complete product spectrum and additional information Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin Configuration (Top view) Pin Symbol Function 1 S1 Source Channel 1 S1 1 8 D1 2 IN1 Input Channel 1 IN1 2 7 D1 3 S2 Source Channel 2 4 IN2 S2 3 6 D2 Input Channel 2 5 D2 Drain Channel 2 IN2 4 5 D2 6 D2 Drain Channel 2 PG-DSO-8-25 7 D1 Drain Channel 1 8 D1 Drain Channel 1 Drain1 Pin 7, 8 HITFET Current Overvoltage- Limitation Protection Vbb In1 Gate-Driving Unit Pin 2 M Over- temperature Overload Short circuit Protection Protection ESD Protection Pin 1 Source1 Drain2 Pin 5, 6 Current Overvoltage- Limitation Protection Vbb In2 Gate-Driving Unit Pin 4 M Over- temperature Overload Short circuit Protection Protection ESD Protection Pin 3 Source2 Datasheet 2 Rev. 1.3, 2007-11-06