PROFET BTS 410 E2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection V 65 V bb(AZ) Current limitation Short circuit protection V 4.7 ... 42 V Operating voltage bb(on) Thermal shutdown On-state resistance R 220 ON m Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive loads Current limitation I 5A L(SCr) 1 ) Reverse battery protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis TO-220AB/5 Open drain diagnostic output Open load detection in ON-state CMOS compatible input 5 5 Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 1 Standard Straight leads SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb 3 Voltage Gate Overvoltage Current source protection limit protection V Logic OUT Limit for Charge pump Voltage unclamped 5 sensor Level shifter Temperature ind. loads sensor Rectifier IN 2 Open load Load ESD Logic detection 4 ST Short circuit detection PROFET GND 1 Load GND Signal GND 1) With external current limit (e.g. resistor R =150 ) in GND connection, resistors in series with IN and ST GND connections, reverse load current limited by connected load. Semiconductor Group 1 of 16 2003-Oct-01 BTS 410 E2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 V + Positive power supply voltage, bb the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT O Output to the load (Load, L) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) V 65V bb 2) 4) Load dump protection V = U + V , U = 13.5 V V 100 V LoadDump A s A Load dump 3) R = 2 , R = 6.6 , t = 400 ms, IN= low or high I L d Load current (Short circuit current, see page 4) I self-limitedA L Operating temperature range T -40 ...+150 C j -55 ...+150 Storage temperature range T stg Power dissipation (DC), T 25 C P 50W C tot Inductive load switch-off energy dissipation, single pulse V = 12V, T = 150C, T = 150C const. j,start C bb I = 1.8 A, Z = 2.3 H, 0 : E 4.5J AS L L Electrostatic discharge capability (ESD) IN: V 1 kV ESD (Human Body Model) all other pins: 2 acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) V -0.5 ... +6 V IN Current through input pin (DC) I 5.0 mA IN Current through status pin (DC) I 5.0 ST see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: R -- -- 2.5 K/W thJC R thJA -- -- 75 junction - ambient (free air): 5) SMD version, device on PCB : -- 35 -- 2) Supply voltages higher than V require an external current limit for the GND and status pins, e.g. with a bb(AZ) 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) R = internal resistance of the load dump test pulse generator I 4) V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Load dump 2 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for V bb connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01