PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection V 63 V bb(AZ) Current limitation V 4.5 ... 42 V Operating voltage bb(on) Short-circuit protection On-state resistance R 18 Thermal shutdown ON m Overvoltage protection (including load dump) Load current (ISO) I 21 A L(ISO) Fast demagnetization of inductive loads Current limitation I 70 A L(SCr) 1 ) Reverse battery protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Open drain diagnostic output PG-TO220-5-11 PG-TO263-5-2 Open load detection in ON-state CMOS compatible input 5 2) Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 Standard SMD Green Product (RoHS compliant) AEC qualified Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. R + V bb bb 3 Voltage Gate Overvoltage Current source protection limit protection V Logic OUT Charge pump Limit for Voltage unclamped 5 sensor Level shifter Temperature ind. loads sensor Rectifier IN 2 Open load Load Logic ESD detection 4 ST Short circuit detection PROFET GND 1 Load GND Signal GND 1) No external components required, reverse load current limited by connected load. 2) Additional external diode required for charged inductive loads Data Sheet 1 of 14 2010-Jan-26 PROFET BTS 442 E2 Pin Symbol Function 1 GND Logic ground 2 IN Input, activates the power switch in case of logical high signal 3 V Positive power supply voltage, bb the tab is shorted to this pin 4 ST Diagnostic feedback, low on failure 5 OUT Output to the load (Load, L) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) V 63V bb 3) Load dump protection V = U + V , U = 13.5 V V 80 V LoadDump A s A Load dump R = 2 , R = 1.1 , t = 200 ms, IN= low or high I L d Load current (Short-circuit current, see page 4) I self-limitedA L Operating temperature range T -40 ...+150 C j -55 ...+150 Storage temperature range T stg Power dissipation (DC) P 167W tot Inductive load switch-off energy dissipation, single pulse T=150 C: E 2.1J j AS Electrostatic discharge capability (ESD) V 2.0kV ESD (Human Body Model) Input voltage (DC) V -0.5 ... +6 V IN Current through input pin (DC) I 5.0 mA IN Current through status pin (DC) I 5.0 ST see internal circuit diagrams page 6... Thermal resistance chip - case: R 0.75 K/W thJC 75 junction - ambient (free air): R thJA 4) SMD version, device on pcb : typ. 33 3) V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Load dump 2 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for V bb connection. PCB is vertical without blown air. Data Sheet 2 2010-Jan-26