X-On Electronics has gained recognition as a prominent supplier of D1050N18T Rectifiers across the USA, India, Europe, Australia, and various other global locations. D1050N18T Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

D1050N18T Infineon

D1050N18T electronic component of Infineon
D1050N18T Infineon
D1050N18T Rectifiers
D1050N18T  Semiconductors

Images are for reference only
See Product Specifications
Part No. D1050N18T
Manufacturer: Infineon
Category: Rectifiers
Description: Rectifiers Rectifier Diode 1800V 1050A
Datasheet: D1050N18T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6
Multiples : 6
6 : USD 173.918
12 : USD 169.5256
30 : USD 169.5256
54 : USD 168.5651
N/A

Obsolete
   
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We are delighted to provide the D1050N18T from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D1050N18T and other electronic components in the Rectifiers category and beyond.

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Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1050N Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / maximum rated values V 1200 1600 V Periodische Spitzensperrspannung T = -40C... T RRM vj vj max Kenndaten 1400 1800 V repetitive peak reverse voltages Durchlastrom-Grenzeffektivwert I 2590 A Elektrische Eigenschaften FRMSM maximum RMS on-state current T = 130 C C Dauergrenzstrom I 1050A FAVM average on-state current 2000 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P FAVM average on-state current 3140 A Durchlastrom-Effektivwert I FRMS RMS on-state current Stostrom-Grenzwert T =25 C, t = 10 ms I 24000 A vj P FSM surge current T = T t = 10 ms 18500 A vj vj max P Grenzlastintegral T = 25 C, t = 10 ms It 2880 10As vj P It-value T = T , t = 10 ms 1710 10As vj vj max P Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 5,0 kA v max. 1,76 V vj vj max F F on-state voltage T = T , i = 1,0 kA max. 1,00 V vj vj max F Schleusenspannung T = T V 0,81 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 0,17 m vj vj max T slope resistance T = T A= -6,685E-01 Durchlakennlinie 500 A i 5000 A vj vj max F B= 2,114E-04 on-state characteristic C= 2,752E-01 v = A + B i + C ln ( i + 1 ) + D i F D= -1,385E-02 F F F Sperrstrom T = T , v = V i max. 60 mA vj vj max R RRM R reverse current Thermische Eigenschaften Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand Khlflche / cooling surface R thJC beidseitig / two-sided, = 180sin max. 0,038 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,035 C/W Anode / anode, = 180sin max. 0,064 C/W Anode / anode, DC max. 0,061 C/W Kathode / cathode, = 180sin max. 0,085 C/W Kathode / cathode, DC max. 0,082 C/W bergan gs-Wrmewiderstand Khlflche / cooling surface R thCH beidseitig / two-sided max. 0,005 C/W thermal resistance, case to heatsink max. 0,010 C/W einseitig / single-sided 180 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T -40...+180C c op operating temperature T -40...+180C stg Lagertemp eratur storage temperature prepared by: H.Sandmann date of publication: 2009-06-16 approved by: M.Leifeld revision: 2 IFBIP D AEC / 2009-02-27 / H.Sandmann A 02/09 Seite/page 1/8 Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D1050N Mechanische Eigenschaften / Mechanical properties Seite 3 Gehuse, siehe Anlage Mechanische Eigenschaften page 3 case, see annex Si-Element mit Druckkontakt Si-pellet with pressure contact Anprekraft F 10...24kN clamping force Gewicht G typ. 280g weight Kriechstrecke 25mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. IFBIP D AEC / 2009-02-27 / H.Sandmann A 02/09 Seite/page 2/8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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