X-On Electronics has gained recognition as a prominent supplier of D1381S45T Rectifiers across the USA, India, Europe, Australia, and various other global locations. D1381S45T Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

D1381S45T Infineon

D1381S45T electronic component of Infineon
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Part No.D1381S45T
Manufacturer: Infineon
Category: Rectifiers
Description: Rectifiers 4.5KV 1.63KA
Datasheet: D1381S45T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 1507.9241 ea
Line Total: USD 3015.85 
Availability - 0
MOQ: 2  Multiples: 2
Pack Size: 2
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 2
Multiples : 2
2 : USD 1507.9241

   
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We are delighted to provide the D1381S45T from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D1381S45T and other electronic components in the Rectifiers category and beyond.

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Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T S Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values t = -40C ... t vj vj max Periodische Spitzensperrspannung V 4500 V RRM repetitive peak reverse voltage tvj = +25C ... tvj max Stospitzensperrspannung V 4600 V RSM non-repetetive peak reverse voltage Durchlastrom-Grenzeffektivwert I 2560 A FRMSM RMS forward current t = 85C, f = 50Hz C Dauergrenzstrom I 1380 A FAVM tC = 70C, f = 50Hz mean forward current 1630 A tvj = tvj max, tp = 10ms Stostrom-Grenzwert I 32 kA FSM surge forward current 2 6 2 Grenzlastintegral I t 5,12-10 A s 2 I t-value iFM = 3000A, vR = 0,67 VRRM Period. Abklingsteilheit des Durchlastroms beim Ausschalten (-di /dt) 500 A/s F com CS = 3F, RS = 4 repetitive decay rate of on-state current at turn-of DS = D291S45T Charakteristische Werte / Characteristic values failure rate < 100 typ. Gleichsperrspannung V 3000 V R(D) estimate value continuous direct reverse voltage t = t , i = 2500A vj vj max F max Durchlaspannung v 2,6 V F forward voltage tvj = tvj max Schleusenspannung V 1,4 V (TO) threshold voltage t = t vj vj max Ersatzwiderstand r 0,48 m T forward slope resistance tvj = tvj max Durchlarechenkennlinie max. On-state characteristics for calculation A -1,712 B 0,000708 V = A+ B i + C ln(i + 1)+ D i C 0,688 F F F F D -0,0566 tvj = tvj max, diF/dt = 500A/s Spitzenwert der Durchlaverzgerungsspannung V typ. 57 V FRM peak value of forward recovery voltage t = t v = V vj vj max, R RRM Sperrstrom i 100 mA R reverse current tvj = tvj max max Rckstromspitze I 700 A RM i = 1000A, -di /dt = 250A/s FM F peak reverse recovery current v = 1000V, C = 3F, R = 4 R S S D = D291S45T S tvj = tvj max max Sperrverzgerungsladung Q 2800 As r iFM = 1000A, -diF/dt = 250A/s recovered charge v = 1000V, C = 3F, R = 4 R S S DS = D291S45T SZ-M / 16 June 1997, M. Beuermann Seite/page 1Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T S Thermische Eigenschaften / Thermal properties Khlflche / cooling surface Innerer Wrmewiderstand R thJC beidseitig / two-sided, DC thermal resistance, junction to case max 0,0125 C/W Anode / anode, DC max 0,0228 C/W Kathode /cathode, DC max 0,0277 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCK beidseitig / two-sided max thermal resistance, case to heatsink 0,003 C/W einseitig / single sided max 0,006 C/W Hchstzulssige Sperrschichttemperatur t 140 C vj max max. junction temperature Betriebstemperatur t -40...+140 C c op operating temperature Lagertemperatur t -40...+150 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see appendix Anprekraft F 27...45 kN clampig force typ Gewicht G 850 g weight Kriechstrecke 30 mm creepage distance Luftstrecke 20 mm air distance DIN 40040 Feuchteklasse C humidity classification 2 f = 50Hz Schwingfestigkeit 50 m/s vibration resistance Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehrigen technischen Erluterungen. This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. SZ-M / 16 June 1997, M. Beuermann Seite/page 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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