X-On Electronics has gained recognition as a prominent supplier of DD800S17H4_B2 Rectifiers across the USA, India, Europe, Australia, and various other global locations. DD800S17H4_B2 Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

DD800S17H4_B2 Infineon

DD800S17H4_B2 electronic component of Infineon
DD800S17H4_B2 Infineon
DD800S17H4_B2 Rectifiers
DD800S17H4_B2  Semiconductors

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Part No. DD800S17H4_B2
Manufacturer: Infineon
Category: Rectifiers
Description: Rectifiers IGBT Module 800A 1700V
Datasheet: DD800S17H4_B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 933.7279 ea
Line Total: USD 933.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 933.7279

   
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We are delighted to provide the DD800S17H4_B2 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD800S17H4_B2 and other electronic components in the Rectifiers category and beyond.

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Technische Information / Technical Information IGBT-Modul DD800S17H4 B2 IGBT-Module IHM-B Modul IHM-B module V = 1700V CES I = 800A / I = 1600A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Aktiver Eingang (Rckspeisung) Active frontend (energy recovery) Hochleistungsumrichter High power converters Multi-Level Umrichter Multi level inverter Traktionsumrichter Traction drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Hohe Stromdichte High current density T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Hohe Leistungsdichte High power density IHM B Gehuse IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul DD800S17H4 B2 IGBT-Module Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = -40C 1570 Repetitive peak reverse voltage T = 25C V 1700 V vj RRM Tvj = 150C 1700 Dauergleichstrom I 800 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 1600 A P FRM Repetitive peak forward current Grenzlastintegral VR = 0 V, tP = 10 ms, Tvj = 125C 105 kAs It It - value V = 0 V, t = 10 ms, T = 150C 95,0 kAs R P vj Spitzenverlustleistung T = 125C P 800 kW vj RQM Maximum power dissipation Mindesteinschaltdauer ton min 10,0 s Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 800 A, V = 0 V T = 25C 1,80 2,10 V F GE vj Forward voltage I = 800 A, V = 0 V T = 125C V 1,90 2,10 V F GE vj F I = 800 A, V = 0 V T = 150C 1,95 V F GE vj Rckstromspitze I = 800 A, - di /dt = 6500 A/s (T =150C) T = 25C 900 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 1000 A R vj RM V = -15 V T = 150C 1050 A GE vj Sperrverzgerungsladung I = 800 A, - di /dt = 6500 A/s (T =150C) T = 25C 190 C F F vj vj Recovered charge V = 900 V T = 125C Q 320 C R vj r V = -15 V T = 150C 360 C GE vj Abschaltenergie pro Puls I = 800 A, - di /dt = 6500 A/s (T =150C) T = 25C 110 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 200 mJ R vj rec V = -15 V T = 150C 230 mJ GE vj Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 39,1 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 33,0 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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