ETT630N18P60HPSA1 Infineon

Technische Information / technical information Net z-Thyristor-Modul eTT630N18P60 Phase Control Thyristor Module Key Parameters V / V 1800V DRM RRM ITAVM 628A (TC=85C) ITSM 20000A V 0,8V T0 r 0,341m T RthJC 0,0575K/W Base plate 60mm For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul eTT630N18P60 Phase Control Thyristor Module eTT630N18P60 eTD630N18P60 Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1800 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1800 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1900 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 700 A TRMSM maximum RMS on-state current Dauergrenzstrom I 628 A TC = 85C TAVM average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 20000 A vj P TSM 16800 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 2000000 As vj P It-value T = T , t = 10ms 1411200 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr critical rate of rise of off-state voltage Charakteristische Werte / Characteristic values max. 1,45 V Durchlaspannung T = T , i = 1500 A v vj vj max T T on-state voltage max. 0,8 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,341 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 110 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG date of publication: 2021-02-24 approved by: ML revision: 3.1 Date of Publication 2021-02-24 Revision: 3.1 Seite/page 2/11