Technische Information / Technical Information IGBT-Modul F3L100R12W2H3 B11 IGBT-Module EasyPACK Modul mit aktiverNeutral Point Clamp 2 Topologie und PressFIT / NTC EasyPACK module with activeNeutral Point Clamp 2 topology and PressFIT / NTC Vorlufige Daten / Preliminary Data VCES = 1200V I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar Applications Elektrische Eigenschaften Electrical Features High Speed IGBT H3 High Speed IGBT H3 Niedrige Schaltverluste Low Switching Losses Tvj op = 150C Tvj op = 150C Mechanische Eigenschaften Mechanical Features PressFIT Verbindungstechnik PressFIT Contact Technology RoHS konform RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2015-02-03 approved by: AKDA revision: 2.3 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul F3L100R12W2H3 B11 IGBT-Module Vorlufige Daten Preliminary Data IGBT, T1 / T4 / IGBT, T1 / T4 Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom I 100 A CN Implemented collector current Kollektor-Dauergleichstrom T = 100C, T = 175C I 50 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung TC = 25C, Tvj max = 175C Ptot 375 W Total power dissipation Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 50 A, V = 15 V T = 25C 1,55 1,75 V C GE vj Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 50 A, V = 15 V T = 150C 1,75 V C GE vj Gate-Schwellenspannung IC = 3,80 mA, VCE = VGE, Tvj = 25C VGEth 5,05 5,80 6,45 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,80 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 7,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 6,15 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,345 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 400 V Tvj = 25C 0,13 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,14 s GE vj RGon = 1,1 Tvj = 150C 0,145 s Anstiegszeit, induktive Last IC = 50 A, VCE = 400 V Tvj = 25C 0,02 s t r Rise time, inductive load V = 15 V T = 125C 0,03 s GE vj RGon = 1,1 Tvj = 150C 0,03 s Abschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 400 V Tvj = 25C 0,30 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,38 s GE vj RGoff = 1,1 Tvj = 150C 0,40 s Fallzeit, induktive Last IC = 50 A, VCE = 400 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,06 s GE vj RGoff = 1,1 Tvj = 150C 0,065 s Einschaltverlustenergie pro Puls IC = 50 A, VCE = 400 V, LS = 25 nH Tvj = 25C 1,05 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 2200 A/s (T = 150C) T = 125C E 1,65 mJ GE vj vj on RGon = 1,1 Tvj = 150C 1,80 mJ Abschaltverlustenergie pro Puls IC = 50 A, VCE = 400 V, LS = 25 nH Tvj = 25C 1,60 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2400 V/s (T = 150C)T = 125C E 2,60 mJ GE vj vj off RGoff = 1,1 Tvj = 150C 2,95 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,30 0,40 K/W thJC Thermal resistance, junction to case prepared by: CM date of publication: 2015-02-03 approved by: AKDA revision: 2.3 2