Technische Information / Technical Information IGBT-Modul FS300R12OE4P IGBT-Module EconoPACK+ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EconoPACK+ module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor drives Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Sehr groe Robustheit Unbeatable robustness Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C vj op vj op Hohe Stostromfestigkeit High surge current capability Mechanische Eigenschaften Mechanical Features Hohe mechanische Robustheit High mechanical robustness Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology RoHS konform RoHS compliant Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: ZV date of publication: 2016-07-29 approved by: KV revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FS300R12OE4P IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 175C I 300 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 600 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 300 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 300 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 11,5 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 2,25 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 2,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 18,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,05 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 300 A, VCE = 600 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,21 s GE vj RGon = 0,75 Tvj = 150C 0,22 s Anstiegszeit, induktive Last IC = 300 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj RGon = 0,75 Tvj = 150C 0,06 s Abschaltverzgerungszeit, induktive Last IC = 300 A, VCE = 600 V Tvj = 25C 0,40 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,51 s GE vj RGoff = 0,75 Tvj = 150C 0,54 s Fallzeit, induktive Last IC = 300 A, VCE = 600 V Tvj = 25C 0,06 s t f Fall time, inductive load V = 15 V T = 125C 0,10 s GE vj RGoff = 0,75 Tvj = 150C 0,11 s Einschaltverlustenergie pro Puls IC = 300 A, VCE = 600 V, LS = 35 nH Tvj = 25C 19,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 5200 A/s (T = 150C) T = 125C E 29,5 mJ GE vj vj on RGon = 0,75 Tvj = 150C 32,0 mJ Abschaltverlustenergie pro Puls IC = 300 A, VCE = 600 V, LS = 35 nH Tvj = 25C 24,5 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 38,0 mJ GE vj vj off RGoff = 0,75 Tvj = 150C 42,5 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 1200 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,134 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: ZV date of publication: 2016-07-29 approved by: KV revision: V2.0 2