HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level Base BENEFITS cathode 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 1 3 Cathode Anode DESCRIPTION HFA08TB60 is a state of the art ultrafast recovery diode. TO-220AC Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the HFA08TB60 PRODUCT SUMMARY is especially well suited for use as the companion diode for V 600 V R IGBTs and MOSFETs. In addition to ultrafast recovery time, V at 8 A at 25 C 1.7 V the HEXFRED product line features extremely low values of F peak recovery current (I ) and does not exhibit any RRM I 8 A F(AV) tendency to snap-off during the t portion of recovery. The b t (typical) 18 ns rr HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in T (maximum) 150 C J both the diode and the switching transistor. These Q (typical) 65 nC rr HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The dI /dt (typical) 240 A/s (rec)M HEXFRED HFA08TB60 is ideally suited for applications in I 5.0 A RRM power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R Maximum continuous forward current I T = 100 C 8.0 F C Single pulse forward current I 60 A FSM Maximum repetitive forward current I 24 FRM T = 25 C 36 C Maximum power dissipation P W D T = 100 C 14 C Operating junction and storage temperature range T , T - 55 to + 150 C J Stg Document Number: 93044 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 30-Jul-08 1 HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 8.0 A -1.4 1.7 F V Maximum forward voltage V I = 16 A See fig. 1 - 1.7 2.1 FM F I = 8.0 A, T = 125 C - 1.4 1.7 F J -0.3 5.0 V = V rated Maximum reverse R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 100 500 J R R Junction capacitance C V = 200 V See fig. 3 - 10 25 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 18 - rr F F R Reverse recovery time t T = 25 C -37 55 ns rr1 J t T = 125 C - 55 90 rr2 J I T = 25 C - 3.5 5.0 RRM1 J Peak recovery current A I = 8.0 A F I T = 125 C - 4.5 8.0 RRM2 J dI /dt = 200 A/s F T = 25 C - 65 138 Q rr1 J V = 200 V R Reverse recovery charge nC Q T = 125 C - 124 360 rr2 J dI /dt1 T = 25 C - 240 - Peak rate of fall of recovery (rec)M J A/s current during t b dI /dt2 T = 125 C - 210 - (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --3.5 thJC junction to case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AC HFA08TB60 www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 93044 2 Revision: 30-Jul-08