X-On Electronics has gained recognition as a prominent supplier of HFA35HB60C Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. HFA35HB60C Schottky Diodes & Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

HFA35HB60C Infineon

HFA35HB60C electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.HFA35HB60C
Manufacturer: Infineon
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 600V 30A 3-Pin(3+Tab) TO-254AA
Datasheet: HFA35HB60C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 360.2352 ea
Line Total: USD 360.24 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1631
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 350.571
10 : USD 345.6734
25 : USD 340.6019
50 : USD 340.3411

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current Max
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
Avg Forward Curr Max
Peak Non-Repetitive Surge Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HFA35HB60C from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFA35HB60C and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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PD-20378C HFA35HB60C FRED Ultrafast, Soft Recovery Diode  V = 600V R Reduced RFI and EMI Reduced Snubbing V = 1.9V F Extensive Characterization of Recovery Parameters Hermetic Q = 270nC rr Electrically Isolated Ceramic Eyelets di(rec)M/dt = 345A/s ESD Rating: Class 3B per MIL-STD-750, Method 1020    These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.     Parameter Max. Units V Cathode to Anode Voltage (Per Leg) 600 V R I Continuous Forward Current,  T =100 C 30 F(AV) C  I Single Pulse Forward Current,  T = 25C (Per Leg) 150 FSM C P @ T = 25C Maximum Power Dissipation 63 W D C T T Operating Junction and Storage Temperature Range -55 to +150 C J, STG                CASE STYLE (ISOLATED BASE) ANODE COMMON ANODE CATHODE TO-254AA www.irf.com 1  HFA35HB60C Electrical Characteristics (Per Leg)@ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions V Cathode Anode Breakdown Voltage 600 V I = 250A R BR V Forward Voltage 1.7 I = 15A, T = -55C F F J See Fig. 1 1.9 I = 15A, T = 25C F J V !#  2.3 I = 30A, T = 25C F J 2.1 I = 15A, T = 125C F J I Reverse Leakage Current 10 A V = V Rated R R R See Fig. 2 1.0 mA V = 480V, T = 125C R J C Junction Capacitance, See Fig. 3 24 36 pF V = 200V T R L Series Inductance 8.7 nH Measured from anode lead to cathode S lead, 6mm ( 0.025 in. ) from package Dynamic Recovery Characteristics (Per Leg) @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions t Reverse Recovery Time 54 88 ns T = 25C See Fig. rr1 J t 94 140 T = 125C 5 I = 15A rr2 J F I Peak Recovery Current 5.6 7.8 T = 25C See Fig. RRM1 J  I 7.8 11.7 T = 125C 6 V = 200V RRM2 J R Q Reverse Recovery Charge 180 270 T = 25C See Fig. rr1 J  Q 435 650 T = 125C 7 di /dt = 200A/s rr2 J f di /dt1 Peak Rate of Fall of Recovery Current 300 345 T = 25C See Fig. (rec)M J   di /dt2 During t 190 285 T = 125C 8 (rec)M b J Thermal - Mechanical Characteristics Parameter Typ. Max. Units R Junction-to-Case, Single Leg Conducting 2.0 C/W thJC Wt Weight 9.3 g 2 www.irf.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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