X-On Electronics has gained recognition as a prominent supplier of HFB25HJ20 Rectifiers across the USA, India, Europe, Australia, and various other global locations. HFB25HJ20 Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

HFB25HJ20 Infineon

HFB25HJ20 electronic component of Infineon
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See Product Specifications
Part No.HFB25HJ20
Manufacturer: Infineon
Category: Rectifiers
Description: Diode Switching 200V 25A 3-Pin SMD-0.5
Datasheet: HFB25HJ20 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 254.5837 ea
Line Total: USD 12729.18 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 50
Multiples : 50
50 : USD 254.5837
10 : USD 245.6512
50 : USD 232.2445
100 : USD 220.3346
250 : USD 209.9213

   
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We are delighted to provide the HFB25HJ20 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFB25HJ20 and other electronic components in the Rectifiers category and beyond.

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PD-94150C HFB25HJ20 FRED Ultrafast, Soft Recovery Diode V = 200V R Reduced RFI and EMI Reduced Snubbing I = 25A F(AV) Extensive Characterization of Recovery Parameters Hermetic t = 35ns Surface Mount rr ESD Rating: Class NS per MIL-STD-750, Method 1020 These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Parameter Max. Units V Cathode to Anode Voltage 200 V R I Continuous Forward Current, T = 106C 25 F(AV) C I Single Pulse Forward Current, T = 25C 150 FSM C P T = 25C Maximum Power Dissipation 70 W D C T T Operating Junction and Storage Temperature Range -55 to +150 C J, STG CASE STYLE SMD-0.5 www.irf.com 1 HFB25HJ20 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions V Cathode Anode Breakdown Voltage 200 V I = 100A BR R V Forward Voltage 1.18 I = 25A, T =-55C F F J See Fig. 1 0.94 I = 10A, T = 25C F J 1.07 I = 25A, T = 25C F J V 1.19 I = 50A, T = 25C F J 0.88 I = 25A, T =125C F J I Reverse Leakage Current 10 A V = V Rated R R R See Fig. 2 250 A V = V Rated, T = 125C R R J C Junction Capacitance, See Fig. 3 78 pF V = 200V T R L Series Inductance 4.8 nH Measured from center of cathod S pad to center of anode pad Dynamic Recovery Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions t Reverse Recovery Time 35 ns I = 1.0A,V = 30V, di /dt = 200A/s rr F R f t Reverse Recovery Time 28 ns T = 25C See Fig. rr1 J t 43 T = 125C 5 I = 25A rr2 J F I Peak Recovery Current 3.9 T = 25C See Fig. RRM1 J I 6.1 T = 125C 6 V = 160V RRM2 J R Q Reverse Recovery Charge 61 T = 25C See Fig. rr1 J Q 146 T = 125C 7 di /dt = 200A/s rr2 J f di /dt1 Peak Rate of Fall of Recovery Current 820 T = 25C See Fig. (rec)M J di /dt2 During t 1560 T = 125C 8 (rec)M b J Thermal - Mechanical Characteristics Parameter Typ. Max. Units R Junction-to-Case 1.76 C/W thJC Wt Weight 1.0 g 2 www.irf.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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