IDB06S60C nd TM 2 Generation thinQ SiC Schottky Diode Product Summary Features V 600 V DC Revolutionary semiconductor material - Silicon Carbide Q 15 nC c Switching behavior benchmark I 6 A F No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability 2 D PAK (PG-TO263-3-2) Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 5mA thinQ 2G Diode designed for fast switching applications like: CCM PFC Motor Drives Type Package Marking Pin 2 Pin 3 IDB06S60C D2PAK (PG-TO263-3-2) D06S60C C A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T <135C Continuous forward current 6 A F C RMS forward current I f =50 Hz 9 F,RMS Surge non-repetitive forward current, I T =25C, t =10ms 46 F,SM C p sine halfwave T =150C, j Repetitive peak forward current I 24 F,RM T =100C, D =0.1 C Non-repetitive peak forward current I T =25C, t =10s 210 F,max C p 2 2 i t value T =25C, t =10ms 10 i dt A s C p V Repetitive peak reverse voltage 600 V RRM V =0480V Diode ruggedness dv/dt dv/ dt 50 V/ns R Power dissipation P T =25C 52 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Rev. 2.3 page 1 2014-10-15IDB06S60C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.9 K/W thJC SMD version, device R on PCB, minimal - - 62 thJA Footprint Thermal resistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling - 35 - 3) area Soldering temperature, T reflow MSL1 - - 260 C sold reflowsoldering 10sec Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.08mA 600 - - V DC R V I =6A, T =25C Diode forward voltage - 1.5 1.7 F F j I =6 A, T =150C - 1.7 2.1 F j I V =600V, T =25C Reverse current - 0.7 80 A R R j V =600V, T =150C - 3 800 R j AC characteristics V =400V, I I , R F F,max Q Total capacitive charge - 15 - nC c di /dt =200A/s, F 4) t - - <10 ns Switching time c T =150C j V =1V, f =1MHz Total capacitance C - 280 - pF R V =300V, f =1MHz - 35 - R V =600V, f =1MHz - 35 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms at 5mA. 3) 2 Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertikal with out blown air. 4) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t , which is dependent on T , I , di/dt. No reverse recovery time constant t due to rr j LOAD rr absence of minority carrier injection. 5) Only capacitive charge occuring, guaranteed by design. Rev. 2.3 page 2 2014-10-15