IDD04S60C nd TM 2 Generation thinQ SiC Schottky Diode Product Summary Features V 600 V DC Revolutionary semiconductor material - Silicon Carbide Q 8 nC c Switching behavior benchmark I 4 A F No reverse recovery/ No forward recovery No temperature influence on the switching behavior PG-TO252 High surge current capability Pb-free lead plating RoHS compliant 3 1) Qualified according to JEDEC for target applications 2) 1 Breakdown voltage tested at 20mA 2 Optimized for high temperature operation thinQ 2G Diode specially designed for fast switching applications like: SMPS e.g. CCM PFC typ P = 400 - 800W out Motor Drives Solar applications UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD04S60C PG-TO252 D04S60C n.c. A C Maximum ratings Value Parameter Symbol Conditions Unit Continuous forward current I T <130C 4 A F C T <100C 6 C I RMS forward current f =50 Hz 5.6 F,RMS Surge non-repetitive forward current, I T =25C, t =10ms 32.6 F,SM C p sine halfwave T =150C, j I Repetitive peak forward current 19.6 F,RM T =100C, D =0.1 C I T =25C, t =10s Non-repetitive peak forward current 200 F,max C p 2 2 T =25C, t =10ms i t value 5.3 i dt C p A s Repetitive peak reverse voltage V 600 V RRM Diode dv/dt ruggedness dv/ dt V = 0.480V 50 V/ns R P T =25C Power dissipation 42 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Rev. 2.3 page 1 2013-02-12IDD04S60C Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.6 K/W thJC SMD version, device Thermal resistance, on PCB, minmal - - 75 junction - ambient footprint R thJA SMD Version, device 2 on PCB, 6 cm - - 50 3) cooling Soldering temperature T reflow MSL 3 - - 260 C sold reflowsoldering Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.05mA DC blocking voltage 600 - - V DC R V I =4A, T =25C Diode forward voltage - 1.7 1.9 F F j I =4A, T =150C - 2 2.4 F j I = A, T = 25C 1.9 2.1 F j I = A, T = 150C 2.3 2.9 F j Reverse current I V =600V, T =25C - 0.5 50 A R R j V =600V, T =150C - 2 500 R j AC characteristics V =400V,I I , R F F,max Total capacitive charge Q - 8 - nC c di /dt =200A/s, F 4) t - - <10 ns Switching time c T =150C j V =1V, f =MHz C - 130 - pF R Total capacitance V =300V, f =1MHz - 20 - R V =600V, f =1MHz - 20 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms at 20 mA. 3) 2 Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertikal with out blown air. 4) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t , which is dependent on T , I , di/dt. No reverse recovery time constant t due to rr j LOAD rr absence of minority carrier injection. 5) Only capacitive charge occuring, guaranteed by design. 6) Repetitive condition defined by T 175C j Rev. 2.3 page 2 2013-02-12