The Infineon IDD09SG60C is a 900 V N-channel MOSFET. It has a maximum drain current of 20 A, a maximum drain to source on-state resistance of 0.036 O, and a maximum gate to source voltage of +/-20 V. The device features logic level gate drive, a SuperFAST recovery bonded diode, and low input capacitance. It is suitable for applications such as motor controls, telecom and industrial switching, PFC, hard-switching converters, and AC drives.