IDD12SG60C rd TM 3 Generation thinQ SiC Schottky Diode Features Product Summary Revolutionary semiconductor material - Silicon Carbide V 600 V DC Switching behavior benchmark Q 19 nC C No reverse recovery / No forward recovery Temperature independent switching behavior I T < 130 C 12 A F C High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 20mA Optimized for high temperature operation Lowest Figure of Merit Q /I C F thinQ 3G Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD12SG60C PG-TO252-3 D12G60C n.c. A C Maximum ratings Value Parameter Symbol Conditions Unit Continuous forward current I T <130 C 12 A F C I T =25 C, t =10 ms 59 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10 ms 51 C p I T =25 C, t =10 s Non-repetitive peak forward current 430 F,max C p 2 2 T =25 C, t =10 ms 17 i dt A s C p i t value T =150 C, t =10 ms 12 C p V T =25 C Repetitive peak reverse voltage 600 V RRM j dv/ dt V = 0.480 V Diode dv/dt ruggedness 50 V/ns R Power dissipation P T =25 C 125 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Soldering temperature, reflow T reflow MSL1 260 sold soldering (max) Rev. 2.4 page 1 2012-12-12IDD12SG60C Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.2 K/W thJC SMD version, device R on PCB, minimal -- 75 thJA footprint Thermal resistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling -50 - 5) area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.05 mA, T =25 C 600 - - V DC R j V I =12 A, T =25 C Diode forward voltage - 1.8 2.1 F F j I =12 A, T =150 C - 2.2 - F j Reverse current I V =600 V, T =25 C - 1 100 A R R j V =600 V, T =150 C - 4 1000 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge -19 - nC c di /dt =200 A/s, F 3) t - - <10 ns Switching time c T =150 C j Total capacitance C V =1 V, f =1 MHz - 310 - pF R V =300 V, f =1 MHz -50 - R V =600 V, f =1 MHz -50 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T, I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection. 4) Under worst case Z conditions. th 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air 6) Only capacitive charge occuring, guaranteed by design. Rev. 2.4 page 2 2012-12-12