X-On Electronics has gained recognition as a prominent supplier of IDH02SG120 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. IDH02SG120 Schottky Diodes & Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

IDH02SG120 Infineon

IDH02SG120 electronic component of Infineon
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See Product Specifications
Part No.IDH02SG120
Manufacturer: Infineon
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SIC DIODEN
Datasheet: IDH02SG120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.6931
10 : USD 2.7994
100 : USD 2.2225
500 : USD 1.9981
1000 : USD 1.7737
2500 : USD 1.7737
5000 : USD 1.6775
10000 : USD 1.6455
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the IDH02SG120 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IDH02SG120 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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IDH02SG120 rd TM 3 Generation thinQ SiC Schottky Diode Features Product SummaryProduct SummaryProduct Summary Revolutionary semiconductor material - Silicon Carbide VVV 12001200 600 VVV DCDCDC Switching behavior benchmark QQQ 7.23.27.2 nCnCnC CCC No reverse recovery / No forward recovery III T T T < < < 130 C130 C130 C 223 AAA Temperature independent switching behavior FFF CCC High surge current capability Pb-free lead plating RoHS compliant PG-TO220-2PG-TO220-2 1) Qualified according to JEDEC for target applications Optimized for high temperature operation Lowest Figure of Merit Q /I C F TM thinQ 3G Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS Type Package Marking Pin 1 Pin 2 IDH02SG120 PG-TO220-2 D02G120 C A Maximum ratings Parameter Symbol Conditions Value Unit I T <130 C Continuous forward current 2A F C I T =25 C, t =10 ms 15 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10 ms 13 C p I T =25 C, t =10 s Non-repetitive peak forward current 90 F,max C p 2 2 T =25 C, t =10 ms 1.4 i dt C p A s i t value T =150 C, t =10 ms 1.1 C p T =25 C Repetitive peak reverse voltage V 1200 V RRM j V = 0.960 V Diode dv/dt ruggedness dv/ dt 50 V/ns R Power dissipation P T =25 C 75 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) from T 260 sold wavesoldering only allowed at leads case for 10s Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.0 page 1 2009-09-04 IDH02SG120 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2 K/W thJC Thermal resistance, Thermal resistance, R thJA junction- ambient, -- 62 junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.05 mA, T =25 C DC blocking voltage 1200 - - V DC R j Diode forward voltage V I =2 A, T =25 C - 1.65 1.8 F F j I =2 A, T =150 C - 2.55 - F j Reverse current I V =1200 V, T =25 C - 2 48 A R R j V =1200 V, T =150 C - 8 400 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge - 7.2 - nC c di /dt =200 A/s, F 2) t - - <10 ns Switching time c T =150 C j V =1 V, f =1 MHz Total capacitance C - 125 - pF R V =300 V, f =1 MHz -12- R V =600 V, f =1 MHz -10- R 1) J-STD20 and JESD22 2) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due to rr j LOAD rr absence of minority carrier inje 3) Under worst case Z conditions. th 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0 page 2 2009-09-04

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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