IDH02SG120 rd TM 3 Generation thinQ SiC Schottky Diode Features Product SummaryProduct SummaryProduct Summary Revolutionary semiconductor material - Silicon Carbide VVV 12001200 600 VVV DCDCDC Switching behavior benchmark QQQ 7.23.27.2 nCnCnC CCC No reverse recovery / No forward recovery III T T T < < < 130 C130 C130 C 223 AAA Temperature independent switching behavior FFF CCC High surge current capability Pb-free lead plating RoHS compliant PG-TO220-2PG-TO220-2 1) Qualified according to JEDEC for target applications Optimized for high temperature operation Lowest Figure of Merit Q /I C F TM thinQ 3G Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS Type Package Marking Pin 1 Pin 2 IDH02SG120 PG-TO220-2 D02G120 C A Maximum ratings Parameter Symbol Conditions Value Unit I T <130 C Continuous forward current 2A F C I T =25 C, t =10 ms 15 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10 ms 13 C p I T =25 C, t =10 s Non-repetitive peak forward current 90 F,max C p 2 2 T =25 C, t =10 ms 1.4 i dt C p A s i t value T =150 C, t =10 ms 1.1 C p T =25 C Repetitive peak reverse voltage V 1200 V RRM j V = 0.960 V Diode dv/dt ruggedness dv/ dt 50 V/ns R Power dissipation P T =25 C 75 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) from T 260 sold wavesoldering only allowed at leads case for 10s Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.0 page 1 2009-09-04 IDH02SG120 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2 K/W thJC Thermal resistance, Thermal resistance, R thJA junction- ambient, -- 62 junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.05 mA, T =25 C DC blocking voltage 1200 - - V DC R j Diode forward voltage V I =2 A, T =25 C - 1.65 1.8 F F j I =2 A, T =150 C - 2.55 - F j Reverse current I V =1200 V, T =25 C - 2 48 A R R j V =1200 V, T =150 C - 8 400 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge - 7.2 - nC c di /dt =200 A/s, F 2) t - - <10 ns Switching time c T =150 C j V =1 V, f =1 MHz Total capacitance C - 125 - pF R V =300 V, f =1 MHz -12- R V =600 V, f =1 MHz -10- R 1) J-STD20 and JESD22 2) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due to rr j LOAD rr absence of minority carrier inje 3) Under worst case Z conditions. th 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0 page 2 2009-09-04