X-On Electronics has gained recognition as a prominent supplier of IDH03SG60C Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. IDH03SG60C Schottky Diodes & Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

IDH03SG60C Infineon

IDH03SG60C electronic component of Infineon
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Part No.IDH03SG60C
Manufacturer: Infineon
Category: Schottky Diodes & Rectifiers
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; 38W; PG-TO220-2
Datasheet: IDH03SG60C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
7
MOQ : 1
Multiples : 1
1 : USD 4.8242
10 : USD 4.227
30 : USD 3.872
100 : USD 3.5136
500 : USD 3.3481
1000 : USD 3.2747
N/A

Obsolete
   
Manufacturer
Product Category
Technology
Case
Mounting
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
Leakage Current
Power Dissipation
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We are delighted to provide the IDH03SG60C from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IDH03SG60C and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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IDH03SG60C rd TM 3 Generation thinQ SiC Schottky Diode Features Product Summary Revolutionary semiconductor material - Silicon Carbide V 600 V DC Switching behavior benchmark Q 3.2 nC C No reverse recovery / No forward recovery I T < 130 C 3 A Temperature independent switching behavior F C High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 20mA Optimized for high temperature operation Lowest Figure of Merit Q /I C F thinQ 3G Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS Type Package Marking Pin 1 Pin 2 IDH03SG60C PG-TO220-2 D03G60C C A Maximum ratings Parameter Symbol Conditions Value Unit I T <130C Continuous forward current 3 A F C I T =25C, t =10ms 11.5 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10ms 9.7 C p I T =25C, t =10s Non-repetitive peak forward current 100 F,max C p 2 2 T =25C, t =10ms 0.61 i dt C p A s i t value T =150 C, t =10ms 0.44 C p Repetitive peak reverse voltage V T =25C 600 V RRM j V = 0.480 V Diode dv/dt ruggedness dv/ dt 50 V/ns R P T =25C Power dissipation 38 W tot C Operating and storage temperature T , T -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) T 260 sold wavesoldering only allowed at leads from case for 10s Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.3 page 1 2012-12-12IDH03SG60C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.9 K/W thJC Thermal resistance, Thermal resistance, R junction- ambient, - - 62 thJA junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.05 mA, T =25 C DC blocking voltage 600 - - V DC R j Diode forward voltage V I =3A, T =25C - 2.1 2.3 F F j I =3A, T =150C - 2.8 - F j I V =600V, T =25C Reverse current - 0.23 15 A R R j V =600V, T =150C - 1 150 R j AC characteristics V =400V,I I , R F F,max Total capacitive charge Q - 3.2 - nC c di /dt =200A/s, F 3) t - - <10 ns Switching time c T =150C j V =1V, f =1MHz Total capacitance C - 60 - pF R V =300V, f =1MHz - 8 - R V =600V, f =1MHz - 8 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection. 4) Under worst case Z conditions. th 5) Only capacitive charge occuring, guaranteed by design. Rev. 2.3 page 2 2012-12-12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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