IDH05S120 TM thinQ SiC Schottky Diode Features PPPPPPPPPPPPrrrrrrrrrrrroducoducoducoducoducoducoducoducoducoducoducoduct St St St St St St St St St St St Suuuuuuuuuuuummammammammammammammammammammammammarrrrrrrrrrrryyyyyyyyyyyy Revolutionary semiconductor material - Silicon Carbide VVVVVVVVVVVV 12001200120012001200120012001200600600600600 VVVVVVVVVVVV DCDCDCDCDCDCDCDCDCDCDCDC Switching behavior benchmark QQQQQQQQQQQQ 3.23.23.23.21818181818181818 nCnCnCnCnCnCnCnCnCnCnCnC CCCCCCCCCCCC No reverse recovery / No forward recovery Temperature independent switching behavior IIIIIIIIIIII TTTTTTTTTTTT < < < < < < < < < < < < 130 130 130 130 130 130 130 130 130 130 130 130 CCCCCCCCCCCC 535535535553 AAAAAAAAAAAA FFFFFFFFFFFF CCCCCCCCCCCC High surge current capability Pb-free lead plating RoHS compliant PGPGPGPGPGPG------TTTTTTOOOOOO220-220-220-220-220-220-222222 1) Qualified according to JEDEC for target applications Optimized for high temperature operation Lowest Figure of Merit Q /I C F TM thinQ Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS TyTyppee PackagPackagee MaMarrkkiinngg PinPin 1 1 PinPin 2 2 IDH05S120IDH05S120 PGPG--TTOO220-220-22 D05S120D05S120 CC AA Maximum ratings Value Parameter Symbol Conditions Unit I T <130 C 5A Continuous forward current F C I T =25 C, t =10 ms 29 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10 ms 25 C p I T =25 C, t =10 s Non-repetitive peak forward current 110 F,max C p 2 2 T =25 C, t =10 ms 4 i dt A s C p i t value T =150 C, t =10 ms 3 C p V T =25 C Repetitive peak reverse voltage 1200 V RRM j dv/ dt V = 0.960 V Diode dv/dt ruggedness 50 V/ns R Power dissipation P T =25 C 75 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) T 260 sold wavesoldering only allowed at leads from case for 10s Mounting torque M3 and M3.5 screws 60 Mcm Rev. 2.0Rev. 2.0 page 1page 1 2010-04-202010-04-20IDH05S120 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2 K/W thJC Thermal resistance, Thermal resistance, R junction- ambient, -- 62 thJA junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.05 mA, T =25 C 1200 - - V DC R j V I =5 A, T =25 C Diode forward voltage - 1,65 1,8 F F j I =5 A, T =150 C - 2,55 - F j Reverse current I V =1200 V, T =25 C - 5 120 A R R j V =1200 V, T =150 C - 20 1000 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge -18 - nC c di /dt =200 A/s, F 2) t - - <10 ns Switching time c T =150 C j Total capacitance C V =1 V, f =1 MHz - 250 - pF R V =300 V, f =1 MHz -20 - R V =600 V, f =1 MHz -18 - R 1) J-STD20 and JESD22 2) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection 3) Under worst case Z conditions. th 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0Rev. 2.0 page 2page 2 2010-04-202010-04-20