IDH08S60C nd TM 2 Generation thinQ SiC Schottky Diode Product Summary Features V 600 V DC Revolutionary semiconductor material - Silicon Carbide Q 19 nC c Switching behavior benchmark I 8 A F No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 5mA thinQ 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type Package Marking Pin 1 Pin 2 IDH08S60C PG-TO220-2 D08S60C C A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T <140 C Continuous forward current 8A F C RMS forward current I f =50 Hz 12 F,RMS Surge non-repetitive forward current, I T =25 C, t =10 ms 59 F,SM C p sine halfwave T =150 C, j Repetitive peak forward current I 32 F,RM T =100 C, D =0.1 C I T =25 C, t =10 s Non-repetitive peak forward current 264 F,max C p 2 2 i t value T =25 C, t =10 ms 17 i dt A s C p V Repetitive peak reverse voltage 600 V RRM V = 0.480V Diode dv/dt ruggedness dv/ dt 50 V/ns R Power dissipation P T =25 C 75 W tot C Operating and storage temperature T , T -55 ... 175 C j stg Mounting torque M3 and M3.5 screws 60 Mcm Soldering temperature, 1.6mm (0.063 in.) T 260 C sold wavesoldering only allowed at leads from case for 10s Rev. 2.0 page 1 2009-06-02IDH08S60C Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2 K/W thJC Thermal resistance, R leaded - - 62 thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V I =0.1 mA DC blocking voltage 600 - - V DC R V I =8 A, T =25 C Diode forward voltage - 1.5 1.7 F F j I =8 A, T =150 C - 1.7 2.1 F j I V =600 V, T =25 C Reverse current - 1 100 A R R j V =600 V, T =150 C - 4 1000 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge -19 - nC c di /dt =200 A/s, F 3) t - - <10 ns Switching time c T =150 C j Total capacitance C V =1 V, f =1 MHz - 310 - pF R V =300 V, f =1 MHz -50 - R V =600 V, f =1 MHz -50 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5 mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T, I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection. 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0 page 2 2009-06-02