IDH10S120 TM thinQ SiC Schottky Diode Features PPPPPPPPPPPPPPPPPPrrrrrrrrrrrrrrrrrroducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoduct St St St St St St St St St St St St St St St St St Suuuuuuuuuuuuuuuuuummammammammammammammammammammammammammammammammammammarrrrrrrrrrrrrrrrrryyyyyyyyyyyyyyyyyy Revolutionary semiconductor material - Silicon Carbide VVVVVVVVVVVVVVVVVV 120012001200120012001200120012001200120012001200600600600600600600 VVVVVVVVVVVVVVVVVV DCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDC Switching behavior benchmark QQQQQQQQQQQQQQQQQQ 3.23.23.23.23.23.2363636363636363636363636 nCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnC CCCCCCCCCCCCCCCCCC No reverse recovery / No forward recovery Temperature independent switching behavior IIIIIIIIIIIIIIIIII TTTTTTTTTTTTTTTTTT < < < < < < < < < < < < < < < < < < 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 CCCCCCCCCCCCCCCCCC 101010101010101010101010333333 AAAAAAAAAAAAAAAAAA FFFFFFFFFFFFFFFFFF CCCCCCCCCCCCCCCCCC High surge current capability Pb-free lead plating RoHS compliant PGPGPGPGPGPGPGPGPGPG----------TTTTTTTTTTOOOOOOOOOO220-220-220-220-220-220-220-220-220-220-2222222222 1) Qualified according to JEDEC for target applications Optimized for high temperature operation Lowest Figure of Merit Q /I C F TM thinQ Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS TyTyppee PackagPackagee MaMarrkkiinngg PinPin 1 1 PinPin 2 2 IDH10S120IDH10S120 PGPG--TTOO220-220-22 D10S120D10S120 CC AA Maximum ratings Value Parameter Symbol Conditions Unit I T <130 C 10 A Continuous forward current F C I T =25 C, t =10 ms 58 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10 ms 50 C p I T =25 C, t =10 s Non-repetitive peak forward current 250 F,max C p 2 2 T =25 C, t =10 ms 16 i dt A s C p i t value T =150 C, t =10 ms 12 C p V T =25 C Repetitive peak reverse voltage 1200 V RRM j dv/ dt V = 0.960 V Diode dv/dt ruggedness 50 V/ns R Power dissipation P T =25 C 135 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) T 260 sold wavesoldering only allowed at leads from case for 10s Mounting torque M3 and M3.5 screws 60 Mcm Rev. 2.0Rev. 2.0 page 1page 1 2010-04-202010-04-20IDH10S120 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1 K/W thJC Thermal resistance, Thermal resistance, R junction- ambient, -- 62 thJA junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.05 mA, T =25 C 1200 - - V DC R j V I =10 A, T =25 C Diode forward voltage - 1,65 1,8 F F j I =10 A, T =150 C - 2,55 - F j Reverse current I V =1200 V, T =25 C - 10 240 A R R j V =1200 V, T =150 C - 40 1000 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge -36 - nC c di /dt =200 A/s, F 2) t - - <10 ns Switching time c T =150 C j Total capacitance C V =1 V, f =1 MHz - 500 - pF R V =300 V, f =1 MHz -40 - R V =600 V, f =1 MHz -36 - R 1) J-STD20 and JESD22 2) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection 3) Under worst case Z conditions. th 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0Rev. 2.0 page 2page 2 2010-04-202010-04-20