IDH15S120 TM thinQ SiC Schottky Diode Features PPPPPPPPPPPPPPPPPPPPPPPPrrrrrrrrrrrrrrrrrrrrrrrroducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoducoduct St St St St St St St St St St St St St St St St St St St St St St St Suuuuuuuuuuuuuuuuuuuuuuuummammammammammammammammammammammammammammammammammammammammammammammammarrrrrrrrrrrrrrrrrrrrrrrryyyyyyyyyyyyyyyyyyyyyyyy Revolutionary semiconductor material - Silicon Carbide VVVVVVVVVVVVVVVVVVVVVVVV 1200120012001200120012001200120012001200120012001200120012001200600600600600600600600600 VVVVVVVVVVVVVVVVVVVVVVVV DCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDCDC Switching behavior benchmark QQQQQQQQQQQQQQQQQQQQQQQQ 3.23.23.23.23.23.23.23.254545454545454545454545454545454 nCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnCnC CCCCCCCCCCCCCCCCCCCCCCCC No reverse recovery / No forward recovery Temperature independent switching behavior IIIIIIIIIIIIIIIIIIIIIIII TTTTTTTTTTTTTTTTTTTTTTTT < < < < < < < < < < < < < < < < < < < < < < < < 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 CCCCCCCCCCCCCCCCCCCCCCCC 1515151515151515151515151515151533333333 AAAAAAAAAAAAAAAAAAAAAAAA FFFFFFFFFFFFFFFFFFFFFFFF CCCCCCCCCCCCCCCCCCCCCCCC High surge current capability Pb-free lead plating RoHS compliant PGPGPGPGPGPGPGPGPGPGPGPGPGPG--------------TTTTTTTTTTTTTTOOOOOOOOOOOOOO220-220-220-220-220-220-220-220-220-220-220-220-220-220-22222222222222 1) Qualified according to JEDEC for target applications Optimized for high temperature operation Lowest Figure of Merit Q /I C F TM thinQ Diode designed for fast switching applications like: SMPS e.g. CCM PFC Motor Drives Solar Applications UPS TyTyppee PackagPackagee MaMarrkkiinngg PinPin 1 1 PinPin 2 2 IDH15S120IDH15S120 PGPG--TTOO220-220-22 D15S120D15S120 CC AA Maximum ratings Value Parameter Symbol Conditions Unit I T <130 C 15 A Continuous forward current F C I T =25 C, t =10 ms 78 F,SM C p Surge non-repetitive forward current, sine halfwave T =150 C, t =10 ms 66 C p I T =25 C, t =10 s Non-repetitive peak forward current 300 F,max C p 2 2 T =25 C, t =10 ms 30 i dt A s C p i t value T =150 C, t =10 ms 20 C p V T =25 C Repetitive peak reverse voltage 1200 V RRM j dv/ dt V = 0.960 V Diode dv/dt ruggedness 50 V/ns R Power dissipation P T =25 C 185 W tot C T , T Operating and storage temperature -55 ... 175 C j stg Soldering temperature, 1.6mm (0.063 in.) T 260 sold wavesoldering only allowed at leads from case for 10s Mounting torque M3 and M3.5 screws 60 Mcm Rev. 2.0Rev. 2.0 page 1page 1 2010-04-202010-04-20IDH15S120 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0,8 K/W thJC Thermal resistance, Thermal resistance, R junction- ambient, -- 62 thJA junction - ambient leaded Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.05 mA, T =25 C 1200 - - V DC R j V I =15 A, T =25 C Diode forward voltage - 1,65 1,8 F F j I =15 A, T =150 C - 2,55 - F j Reverse current I V =1200 V, T =25 C - 15 360 A R R j V =1200 V, T =150 C - 60 1500 R j AC characteristics V =400 V,I I , R F F,max Q Total capacitive charge -54 - nC c di /dt =200 A/s, F 2) t - - <10 ns Switching time c T =150 C j Total capacitance C V =1 V, f =1 MHz - 750 - pF R V =300 V, f =1 MHz -60 - R V =600 V, f =1 MHz -54 - R 1) J-STD20 and JESD22 2) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t which is dependent on T , I and di/dt. No reverse recovery time constant t due rr j LOAD rr to absence of minority carrier injection 3) Under worst case Z conditions. th 4) Only capacitive charge occuring, guaranteed by design Rev. 2.0Rev. 2.0 page 2page 2 2010-04-202010-04-20