IDH16S60C nd TM 2 Generation thinQ SiC Schottky Diode Product Summary Features V 600 V DC Revolutionary semiconductor material - Silicon Carbide Q 38 nC c Switching behavior benchmark I 16 A F No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 5mA thinQ 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type Package Marking Pin 1 Pin 2 IDH16S60C PG-TO220-2 D16S60C C A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T <140C Continuous forward current 16 A F C RMS forward current I f =50 Hz 23 F,RMS Surge non-repetitive forward current, I T =25C, t =10ms 118 F,SM C p sine halfwave T =150C, j Repetitive peak forward current I 64 F,RM T =100C, D =0.1 C I T =25C, t =10s Non-repetitive peak forward current 528 F,max C p 2 2 i t value T =25C, t =10ms 69 i dt A s C p V Repetitive peak reverse voltage 600 V RRM V = 0.480V Diode dv/dt ruggedness dv/ dt 50 V/ns R Power dissipation P T =25C 136 W tot C Operating and storage temperature T , T -55 ... 175 C j stg Mounting torque M3 and M3.5 screws 60 Mcm Soldering temperature, 1.6mm (0.063 in.) T 260 C sold wavesoldering only allowed at leads from case for 10s Rev. 2.1 page 1 2013-02-12IDH16S60C Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.1 K/W thJC Thermal resistance, R leaded - - 62 thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics DC blocking voltage V I =0.2mA 600 - - V DC R Diode forward voltage V I =16A, T =25C - 1.5 1.7 F F j I =16A, T =150C - 1.7 2.1 F j I V =600V, T =25C Reverse current - 2 200 A R R j V =600V, T =150C - 10 2000 R j AC characteristics V =400V,I I , R F F,max Q Total capacitive charge - 38 - nC c di /dt =200A/s, F 3) t - - <10 ns Switching time c T =150C j V =1V, f =MHz C - 650 - pF R V =300V, f =1MHz - 100 - R V =600V, f =1MHz - 100 - R 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. 3) t is the time constant for the capacitive displacement current waveform (independent from T , I and c j LOAD di/dt), different from t , which is dependent on T , I , di/dt. No reverse recovery time constant t due to rr j LOAD rr absence of minority carrier injection. 4) Only capacitive charge occuring, guaranteed by design. Rev. 2.1 page 2 2013-02-12