IDK04G65C5XTMA2 Infineon

SiC Silicon Carbide Diode th TM 5 Generation thinQ 650V SiC Schottky Diode IDK04G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ SiC Schottky Diode IDK04G65C5 1 Description ThinQ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved 1 thermal characteristics and a lower figure of merit (Qc x Vf). 2 The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 9 mA Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit V 650 V DC Q (V = 400 V) 7 nC C R E (V = 400 V) 1.4 J C R I (T < 150C) 4 A F C Table 2 Pin Definition Pin 1 Pin 2 Pin 3 C A n.a. Type / ordering Code Package Marking Related links IDK04G65C5 PG-TO263-2 D0465C5 www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time period of 10 ms Final Data Sheet 2 Rev. 2.1, 2017-08-11