IDW10G120C5BFKSA1 Infineon

Silicon Carbide Schottky Diode IDW10G120C5B th 5 Generation CoolSiC 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2017-07-21 Industrial Power Control IDW10G120C5B th 5 Generation CoolSiC 1200 V SiC Schottky Diode TM CoolSiC SiC Schottky Diode 1 Features: 2 CASE Revolutionary semiconductor material - Silicon Carbide 3 No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 anode 1 Pin 2 and backside cathode Pin 3 anode 2 Key Performance and Package Parameters (leg/device) Type V I Q T Marking Package DC F C j,max IDW10G120C5B 1200 V 5 / 10 A 28 / 57 nC 175C D1012B5 PG-TO247-3 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 2017-07-21