IDW40G65C5 Infineon

SiC Silicon Carbide Diode th TM 5 Generation thinQ 650V SiC Schottky Diode IDW40G65C5B Final Datasheet Rev. 2.0, 2015-04-13 Power Management & Multimarket th 5 Generation thinQ SiC Schottky Diode IDW40G65C5B 1 Description ThinQ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thin- wafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application 1 requirements in this voltage range. 2 3 Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) 3) Breakdown voltage tested at 44 mA Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply 4) Table 1 Key Performance Parameters Parameter Value Unit V 650 V DC Q V =400V 2 x 29 nC C R E V =400V 2 x 6.6 J C R I T < 120C 2 x 20 A F C Table 2 Pin Definition Pin 1 Pin 2 Pin 3 A C A Type / ordering Code Package Marking Related links IDW40G65C5B PG-TO247-3 D4065B5 www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms 3) Per Leg 4) Per Device Final Datasheet 2 Rev. 2.0, 2015-04-13