Technical Information IFF2400P17AE440989 Preliminary data General information IPM for typical voltages up to 690 V RMS Rated output current 650 A RMS Features - Integrated current, voltage and temperature measurement - Tvjop max=150C - Real time Tvj simulation - IGBT4 technology - Smart protection - TIM and pressfit technology - Modbus interface - 100% tested IPM - ROHS compliant - Integrated chip current : 2400A - Integrated chip voltage: 1700V Topology half bridge Energy Storage, Smart Grid, Application Wind, Drives, Solar Heatsink air cooled Implemented sensors voltage, current, temperature Driver signals IGBT +15V Approvals UL61800-5-1 Sales - name IFF2400P17AE440989 prepared by: OW date of publication: 2018-06-22 approved by: ZF revision: 2.3 1Technical Information IFF2400P17AE440989 Preliminary data Characteristic values IGBT characteristic value min. typ. max. Collector-emitter voltage I = 2400 A, T = 25C V 1.95 2.30 V C vj ce sat I = 2400 A, T = 150C 2.45 V C vj Turn on energy loss IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25C Eon 730 mJ IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150C 1170 mJ Turn off energy loss IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25C Eoff 460 mJ IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150C 810 mJ Thermal resistance junction to ambient for diode due diode per IPM switch, Air flow rate= 550m/h R 0.0619 K/W thja IGBT<-IGBT housing Thermal resistance junction to ambient for IGBT due IGBT per IPM switch, Air flow rate= 550m/h R 0.0492 K/W thja IGBT<-diode housing Notes Tinlet = 25C For further details about the thermal resistance please refer to the handbook. Diode characteristic value min. typ. max. Forward voltage IC = 2400 A, Tvj = 25C VF 1.80 2.20 V IC = 2400 A, Tvj = 150C 1.95 V Reverse recovery energy IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 25C Erec 250 mJ IC = 2400 A, VDC = 900 V, LS = 17 nH, Tvj = 150C 530 mJ Thermal resistance junction to ambient for diode due diode per IPM switch, Air flow rate= 550m/h R 0.0721 K/W thja diode<-diode housing Thermal resistance junction to ambient for IGBT due IGBT per IPM switch, Air flow rate= 550m/h R 0.0485 K/W thja diode<-IGBT housing Notes Tinlet = 25C For further details about the thermal resistance please refer to the handbook. Absolute maximum rated values Collector-emitter voltage IGBT T = 25C V 1700 V vj CES Repetitive peak reverse voltage Diode T = 25C V 1700 V vj RRM DC link voltage V 1450 V DC Peak switching current I 4000 A peak Insulation test voltage f = 50 Hz, t = 60 s VISOL 3.4 kVRMS Junction temperature under switching conditions Tvjop 150 C Operational ambient T -40 C amb temperature min. Switching frequency operation f 10 kHz sw2 values Notes prepared by: OW date of publication: 2018-06-22 approved by: ZF revision: 2.3 2