Data Sheet No.PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Product Summary Over temperature shutdown Over current shutdown R 150m (max) ds(on) Active clamp Low current & logic level input E.S.D protection V 50V clamp I 5A shutdown Description T T 1.5 s on/ off The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature over- current, over-temperature, ESD protection and drain to source active clamp.These devices combine a Package HEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switch- ing times and provides efficient protection by turning OFF the power MOSFET when the temperature ex- o ceeds 165 C or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load 8-Lead SOIC demagnetizations. IPS022G (Dual) Typical Connection Load R in series D (if needed) IN control S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1IPS022G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters o are referenced to SOURCE lead. (T = 25 C unless otherwise specified). PCB mounting uses the standard foot- Ambient print with 70 m copper thickness. Symbol Parameter Min. Max. Units Test Conditions V Maximum drain to source voltage 47 ds V V Maximum input voltage -0.3 7 in I Maximum IN current -10 +10 mA in, max (1) I Diode max. continuous current sd cont. o ( lsd mosfets, rth=125 C/W) 1.4 A (1) I Diode max. pulsed current (for ea. mosfet)10 sd pulsed (1) P d Maximum power dissipation o ( Pd mosfets, rth=125 C/W) 1 W ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500, kV ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H T Max. storage temperature -55 150 stor. o C T max. Max. junction temperature -40 +150 j Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R Thermal resistance with standard footprint th1 (2 mos on) (2 mosfets on) 100 R Thermal resistance o th2 with standard footprint C/W 127 (1 mos on) (1 mosfet on) R Thermal resistance with 1 square footprint th3 60 (2 mos on) (2 mosfets on) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com