Data Sheet No.PD 60150-J
( )
IPS031 S
FULLY PROTECTED POWER MOSFET SWITCH
Product Summary
Features
Over temperature shutdown
Over current shutdown
R 60m (max)
ds(on)
Active clamp
Low current & logic level input
E.S.D protection V 50V
clamp
I 12A
shutdown
Description
T T 1.5 s
on/ off
The IPS031/IPS031S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
Packages
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
o
power MOSFET when the temperature exceeds 165 C
or when the drain current reaches 12A. The device
restarts once the input is cycled. The avalanche capability
2
3-Lead D Pak
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations. IPS031S
3-Lead TO-220
IPS031
Typical Connection
Load
R in series
D
(if needed)
IN
control
S
Logic signal
(Refer to lead assignment for correct pin configuration)
www.irf.com 1IPS031(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
o
are referenced to SOURCE lead. (T = 25 C unless otherwise specified). PCB mounting uses the standard foot-
Ambient
print with 70 m copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
V Maximum drain to source voltage 47
ds
V
V Maximum input voltage -0.3 7
in
I Maximum IN current -10 +10 mA
in, max
(1)
I Diode max. continuous current
sd cont.
o
rth=62 C/W IPS031 2.8 TO220 free air
o o
A
rth=5 C/W IPS031 18 TO220 with Rth=5 C/W
o
rth=80 C/W IPS031S 2.2 SMD220 Std. footprint
(1)
I Diode max. pulsed current 18
sd pulsed
(1)
P
d Maximum power dissipation
o
(rth=62 C/W) IPS031 2 W
o
(rth=80 C/W) IPS031S 1.56
ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500,
kV
ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H
T Max. storage temperature -55 150
stor.
o
T max. Max. junction temperature -40 +150 C
j
T Lead temperature (soldering, 10 seconds) 300
lead
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
R 1 Thermal resistance free air 60
th
TO-220
R 2 Thermal resistance junction to case 3
th
o
R 1 Thermal resistance with standard footprint 80
th C/W
2
D PAK (SMD220)
R 2 Thermal resistance with 1" square footprint 60
th
R 3 Thermal resistance junction to case 3
th
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
V Continuous drain to source voltage 35
ds (max)
V High level input voltage 4 6 V
IH
V Low level input voltage 0 0.5
IL
I Continuous drain current
ds
o
o o o
Tamb=85 C (TAmbient = 85 C, IN = 5V, rth = 60 C/W, Tj = 125 C) IPS031 3.1 A
o o o
(TAmbient = 85 C, IN = 5V, rth = 80 C/W, Tj = 125 C) IPS031S 2.8
R Recommended resistor in series with IN pin 0.2
in 5 k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2) 1 S
(2)
F -I Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
r sc
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
2 www.irf.com