Data Sheet No.PD 60152-K IPS041L FULLY PROTECTED POWER MOSFET SWITCH Product Summary Features Over temperature shutdown Over current shutdown R 500m (max) Active clamp ds(on) Low current & logic level input E.S.D protection V 50V clamp I 2A shutdown Description T T 1.5 s on/ off The IPS041L is a fully protected three terminal SMART POWER MOSFET that features over-current, over- temperature, ESD protection and drain to source active clamp.This device combines a HEXFET POWER MOSFET and a gate driver. It offers full Package protection and high reliability required in harsh envi- ronments. The driver allows short switching times and provides efficient protection by turning OFF the o power MOSFET when the temperature exceeds 165 C or when the Drain current reaches 2A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetiza- tions. 3 Lead SOT223 Typical Connection Load R in series D (if needed) IN control S Logic signal (Refer to leads assignments for correct pin configuration) www.irf.com 1IPS041L Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are o referenced to SOURCE lead. (T = 25 C unless otherwise specified). PCB mounting uses the standard footprint with 70 m Ambient copper thickness. Symbol Parameter Min. Max. Units Test Conditions V Maximum drain to source voltage 47 ds V V Maximum input voltage -0.3 7 in I Maximum IN current -10 +10 mA in, max (1) I Diode max. continuous current sd cont. o (rth=125 C/W) 1.2 A (1) I Diode max. pulsed current 3 sd pulsed (1) P d Maximum power dissipation o (rth=125 C/W) 1 W ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500, kV ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H o T Max. storage temperature -55 150 stor. C o T max. Max. junction temperature -40 150 C j Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R 1 Thermal resistance with standard footprint 100 th o C/W R 2 Thermal resistance with 1 square footprint 60 th Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units V Continuous drain to source voltage 35 ds (max) V High level input voltage 4 6 V IH V Low level input voltage 0 0.5 IL I Continuous drain current ds o o o o Tamb=85 C (TAmbient = 85 C, IN = 5V, rth = 100 C/W, Tj = 125 C) 0.75 A R Recommended resistor in series with IN pin 1 5 k in T Max recommended rise time for IN signal (see fig. 2) 1 S r-in(max) (2) F -I Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz r sc (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes. 2 www.irf.com