Data Sheet No.PD 60153-J IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Product Summary Over temperature shutdown Over current shutdown R 500m (max) ds(on) Active clamp Low current & logic level input E.S.D protection V 50V clamp I 2A shutdown Description T T 1.5 s on/ off The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-tem- perature, ESD protection and drain to source active clamp.This device combines a HEXFET POWER MOSFET and a gate driver. It offers full protection Package and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET o when the temperature exceeds 165 C or when the drain current reaches 2A. This device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and cov- ers most inductive load demagnetizations. 8-Lead SOIC Typical Connection Load R in series D (if needed) IN control S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 131 IPS042G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref- o erenced to SOURCE lead. (T = 25 C unless otherwise specified). PCB mounting uses the standard footprint with 70 m Ambient copper thickness. Symbol Parameter Min. Max. Units Test Conditions V Maximum drain to source voltage 47 ds V V Maximum input voltage -0.3 7 in I Maximum IN current -10 +10 mA in, max (1) I Diode max. continuous current sd cont. o (for all Isd mosfets, rth=125 C/W) 1.2 A (1) I Diode max. pulsed current 3 sd pulsed (1) P d Maximum power dissipation o (for all Pd mosfets, rth=125 C/W) 1 W ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500, kV ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H T Max. storage temperature -55 150 stor. o C T max. Max. junction temperature -40 +150 j Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R Thermal resistance with standard footprint th1 100 (2 mosfets on) R Thermal resistance with standard footprint th2 o C/W 125 (1 mosfet on) R Thermal resistance with 1 square footprint th3 (2 mosfets on) 65 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units V Continuous Drain to Source voltage 35 ds (max) V High level input voltage 4 6 IH V V Low level input voltage 0 0.5 IL I Continuous drain current (both mosfets at this current) ds o o o o Tamb=85 C TAmbient = 85 C, IN = 5V, rth = 100 C/W, Tj = 125 C 0.53 A R Recommended resistor in series with IN pin 1 5 k in T Max recommended rise time for IN signal (see fig. 2) 1 S r-in(max) (2) Fr-Isc Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes. 2 www.irf.com