Data Sheet No. PD60296 B IPS1041(L)(R)PbF / IPS1042GPbF SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Product Summary Over temperature shutdown Over current shutdown Active clamp Rds(on) 100m (max.) Low current & logic level input Vclamp 39V ESD protection Ishutdown 4.5A (typ.) Optimized Turn On/Off for EMI Diagnostic on the input current Description Packages The IPS1041(L)(R)PbF and IPS1042GPbF are three terminal Intelligent Power Switches (IPS) featuring low side MOSFETs with over-current, over-temperature, ESD protection and drain to source active clamp. The IPS1042G is a dual channel device while the IPS1041 is a single channel. These devices offer protections and the high reliability required in harsh environments. Each SOT-223 SO-8 D-Pak switch provides efficient protection by turning OFF the IPS1041LPbF IPS1042GPbF IPS1041RPbF power MOSFET when the temperature exceeds 165C or when the drain current reaches 4.5A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Typical Connection +Bat Load 5-6-7-8 (IPS1042G) D 2 (IPS1041(L)(R)) 2-4 (IPS1042G) 1 (IPS1041(L)(R)) IN Control Input R Input Signal S 1-3 (IPS1042G) V Diag 3 (IPS1041(L)(R)) 1 www.irf.com IPS1041(L)(R)PbF / IPS1042GPbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25C unless otherwise specified). Symbol Parameter Min. Max. Units Vds Maximum drain to source voltage -0.3 36 V Vds cont Maximum continuous drain to source voltage - 28 V Vin Maximum input voltage -0.3 6 V Isd cont. Max diode continuous current (limited by thermal dissipation) 1.5 A Maximum power dissipation (internally limited by thermal protection) Pd Rth=60C/W IPS1041L 1 sqr. footprint 2 W Rth=100C/W IPS1042G std. footprint 1.25 Electrostatic discharge voltage (Human body) C=100pF, R=1500 Between drain and source 4 Other combinations 3 ESD kV Electrostatic discharge voltage (Machine Model) C=200pF,R=0 Between drain and source 0.5 Other combinations 0.3 Tj max. Max. storage & operating temperature junction temperature -40 150 C Tsoldering Lead soldering temperature (10 seconds) 300 C Thermal Characteristics Symbol Parameter Typ. Max. Units Rth1 Thermal resistance junction to ambient IPS1041L SOT-223 std. footprint 100 Rth2 Thermal resistance junction to ambient IPS1041L SOT-223 1 sqr. footprint 60 Rth1 Thermal resistance junction to ambient IPS1041R D-Pak std. footprint 70 Rth2 Thermal resistance junction to case IPS1041R D-Pak 6 C/W Thermal resistance junction to ambient IPS1042G SO-8 std. Footprint Rth1 100 1 die active Thermal resistance junction to ambient IPS1042G SO-8 std. footprint Rth1 130 2 die active Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units VIH High level input voltage 4.5 5.5 V VIL Low level input voltage 0 0.5 Continuous drain current, Tambient=85C, Tj=125C, Vin=5V 1.95 Rth=60C/W IPS1041L 1 sqr. Footprint Continuous drain current, Tambient=85C, Tj=125C, Vin=5V 2.2 Rth=50C/W IPS1041R 1 sqr. Footprint Ids A Continuous drain current, Tambient=85C, Tj=125C, Vin=5V 1.5 Rth=100C/W IPS1042G 1 sqr. Footprint - 1 die active Continuous drain current, Tambient=85C, Tj=125C, Vin=5V 0.7 Rth=130C/W IPS1042G 1 sqr. Footprint - 2 die active Rin Recommended resistor in series with IN pin to generate a diagnostic 0.5 10 k Max L Max. recommended load inductance ( including line inductance ) (1) 20 H Max. F Max. frequency 2000 Hz Max. t rise Max. input rising time 1 s (1) Higher inductance is possible if maximum load current is limited - see figure 11 2 www.irf.com