Data Sheet No.PD60156-K IPS511G/IPS512G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp R 150m (max) ds(on) E.S.D protection Status feedback V 50V clamp Open load detection Logic ground isolated from power ground I Limit 5A V 3V open load Description The IPS511G/IPS512G are fully protected five terminal high side switches with built in short-circuit, over-tem- perature, ESD protection, inductive load capability Op. Conditions In Out Dg and diagnostic feedback. The output current is con- H trolled when it reaches I value. The current limitation Normal H H lim is activated until the thermal protection acts. The L Normal L L over-temperature protection turns off the high side Open load H H H switch if the junction temperature exceeds Tshutdown. L It will automatically restart after the junction has Open load H H o cooled 7 C below Tshutdown. A diagnostic pin is H Over current L L (limiting) provided for status feedback of short-circuit, over- Over current L L L temperature and open load detection. The double H L (cycling) level shifter circuitry allows large offsets between the Over-temperature L logic ground and the load ground. L Over-temperature L L Typical Connection Available Package + VCC + 5v Output pull-up resistor 15K Status Vcc feedback Dg control Logic Rdg Out 8 Lead SOIC Rin Gnd In (Single) IPS511G Load 16 Lead SOIC Logic signal (Dual) Logic Gnd Load Gnd IPS512G www.irf.com 1IPS511G/IPS512G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters o are referenced to GROUND lead. (T = 25 C unless otherwise specified). j Symbol Parameter Min. Max. Units Test Conditions V Maximum output voltage V -50 V +0.3 cc cc out V V Maximum logic ground to load ground offset V -50 V +0.3 cc cc offset V Maximum Input voltage -0.3 5.5 in I Maximum IN current -5 10 mA in, max V Maximum diagnostic output voltage -0.3 5.5 V dg I Maximum diagnostic output current -1 10 mA dg, max (1) I Diode max. continuous current sd cont. (IPS511G) 1.4 A (per leg/both legs ON - IPS512G) 0.8 (1) I Diode max. pulsed current 10 sd pulsed ESD1 Electrostatic discharge voltage (Human Body) 4000 C=100pF, R=1500, V ESD2 Electrostatic discharge voltage (Machine Model) 500 C=200pF, R=0, L=10 H P d Maximum power dissipation o (rth=125 C/W) IPS511G 1 W o (rth=85 C/W, both legs on) IPS512G 1.5 o T max. Max. storage & operating junction temp. -40 +150 j C Vvv max Maximum Vcc voltage 50 V Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R Thermal resistance with standard footprint th1 8 Lead SOIC R Thermal resistance with 1 square footprint th2 R Thermal resistance with standard footprint th1 (2 mos on) (2 mosfets on) 85 o C/W R th2 (1) Thermal resistance with standard footprint 16 Lead SOIC (1 mos on) (1 mosfet on) 100 Rth2 Thermal resistance with 1 square footprint (2 mos on) (2 mosfets on) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com