Data Sheet No.PD 60157-H IPS521G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit) R 100m (max) ds(on) Active clamp E.S.D protection V 50V Status feedback clamp Open load detection I Limit 10A Logic ground isolated from power ground V 3V open load Description The IPS521G is a fully protected five terminal high side Truth Table switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic Op. Conditions In Out Dg feedback. The output current is controlled when it reaches I value. The current limitation is activated H lim Normal H H until the thermal protection acts. The over-tempera- L Normal L L ture protection turns off the high side switch if the H H Open load H junction temperature exceeds Tshutdown. It will au- o tomatically restart after the junction has cooled 7 C L Open load H H below Tshutdown. A diagnostic pin is provided for H Over current L L (limiting) status feedback of short-circuit, over-temperature Over current L L L and open load detection. The double level shifter circuitry allows large offsets between the logic ground H Over-temperature L (cycling) L and the load ground. L Over-temperature L L Typical Connection Package + VCC + 5v Output pull-up resistor 15K Status Vcc feedback Dg control Logic Rdg Out Rin Gnd In Load Logic 8 Lead SOIC signal Logic Gnd Load Gnd www.irf.com 1IPS521G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters o are referenced to GROUND lead. (T = 25 C unless otherwise specified). j Symbol Parameter Min. Max. Units Test Conditions V Maximum output voltage V -50 V +0.3 cc cc out V V Maximum logic ground to load ground offset V -50 V +0.3 cc cc offset V Maximum Input voltage -0.3 5.5 in I Maximum positive IN current -5 10 mA in, max V Maximum diagnostic output voltage -0.3 5.5 V dg I Maximum diagnostic output current -1 10 mA dg, max (1) I Diode max. permanent current sd cont. o (rth = 125 C/W) 1.4 A (1) I Diode max. pulsed current 10 sd pulsed ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500, kV ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H (1) P d Maximum power dissipation o (rth=125 C/W) 1 W o T max. Max. storage & operating junction temp. -40 +150 j C Vcc max. Maximum Vcc voltage 50 V Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions R Thermal resistance with standard footprint th1 o 8 Lead SOIC C/W R Thermal resistance with 1 square footprint th2 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units V Continuous V voltage 35 cc cc 5.5 V High level input voltage 4 5.5 IH V V Low level input voltage IL -0.3 0.9 I Continuous output current out o o o o Tc=85 C ( TAmbient = 85 C, Tj = 125 C, R = 100 C/W) 1.6 A th R in Recommended resistor in series with IN pin 4 6 k R dg Recommended resistor in series with DG pin 10 20 (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com