Data Sheet No.PD60159-K IPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Product Summary Over temperature protection (with auto-restart) Over current shutdown R 25m (max) ds(on) Active clamp E.S.D protection V 50V Status feedback clamp Open load detection I 35A Logic ground isolated from power ground shutdown I 1A open load Description The IPS5451/IPS5451S are fully protected five terminal high side switch with built in short circuit, over-tempera- ture, ESD protection, inductive load capability and In Op. Conditions Out Dg diagnostic feedback. The over-current protection latches H Normal H H off the device if the output current exceeds Ishutdown. Normal L L It can be reset by turning the input pin low. The over- H temperature protection turns off the high side switches H Open load H L if the junction temperature exceeds Tshutdown. It will L Open load X H o automatically restart after the junction has cooled 7 C H Over current below Tshutdown. A diagnostic pin is provided for status L (latched) L feedback of over-current, over-temperature and open Over current L L H load detection. The double level shifter circuitry allows H Over-temperature L (cycling) L (cycling) large offsets between the logic ground and the load L Over-temperature L H ground. Typical Connection Packages + VCC + 5v 15K Status Vcc feedback Dg control Logic 5 Lead Rdg SMD220 - IPS5451S Out Rin In Gnd Load Logic signal Logic Gnd 5 Lead Load Gnd TO220 - IPS5451 www.irf.com 1IPS5451/IPS5451S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters o are referenced to GROUND lead. (T = 25 C unless otherwise specified). Ambient Symbol Parameter Min. Max. Units Test Conditions V Maximum output voltage V -45 V +0.3 cc cc out V V Maximum logic ground to load ground offset V -45 V +0.3 cc cc offset V Maximum Input voltage -0.3 5.5 in I Maximum IN current -5 10 mA in, max V Maximum diagnostic output voltage -0.3 5.5 V dg I Maximum diagnostic output current -1 10 mA dg, max (1) I Diode max. continuous current sd cont. o (rth=62 C/W) IPS5451 2.8 A o (rth=80 C/W) IPS5451S 2.2 (1) I Diode max. pulsed current 45 sd pulsed ESD1 Electrostatic discharge voltage (Human Body) 4 C=100pF, R=1500, kV ESD2 Electrostatic discharge voltage (Machine Model) 0.5 C=200pF, R=0, L=10 H (1) P d Maximum power dissipation o (rth=62 C/W) IPS5451 2 W o (rth=80 C/W) IPS5451S 1.56 T max. Max. storage & operating junction temp. -40 +150 j o C T Lead temperature (soldering 10 seconds) 300 lead Vcc max. Maximum Vcc voltage 45 V Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions junction to case R 1 Thermal resistance th TO-220 R 2 Thermal resistance junction to ambient th o R 1 Thermal resistance with standard footprint 60 th C/W 2 D PAK (SMD220) R 2 Thermal resistance with 1 square footprint 35 th R 3 Thermal resistance junction to case th (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 WWW.IRF.COM