IR2011PBF Infineon

IR2011(S)PBF High and Low Side Driver Features Product Summary Floating channel designed for bootstrap operation Fully operational to 200V V (max) 200V OFFSET Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 to 20V I (typ) 1.0A / 1.0A O+/- Independent low and high side channels V 10 20V Input logic HIN/LIN active high OUT Undervoltage lockout for both channels t (typ) 80ns & 60ns on/off 3.3V and 5V logic compatible CMOS Schmitt-triggered inputs with pull-down Delay Matching (max) 20ns Matched propagation delay for both channels Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output Package Options channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. 8-Lead PDIP 8-Lead SOIC Applications Converters DC motor drive Ordering Information Standard Pack Base Part Number Orderable Part Number Package Type Form Quantity IR2011PBF PDIP8 Tube 50 IR2011PBF IR2011SPBF SO8N Tube 95 IR2011SPBF IR2011SPBF SO8N Tape and Reel 2500 IR2011STRPBF 1 www.irf.com 2015 International Rectifier April 14, 2015 IR2011(S)PBF Typical Connection Diagram (Refer to Lead Assignments for correct configuration.) This diagram shows electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout 2 www.irf.com 2015 International Rectifier April 14, 2015