IR2109STRPBF Infineon

Data Sheet No. PD60163-U ( ) & (PbF) IR2109(4) S HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Product Summary Fully operational to +600V Tolerant to negative transient voltage V 600V max. OFFSET dV/dt immune Gate drive supply range from 10 to 20V I +/- 120 mA / 250 mA O Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible V 10 - 20V OUT Cross-conduction prevention logic t (typ.) 750 & 200 ns on/off Matched propagation delay for both channels High side output in phase with IN input Dead Time 540 ns Logic and power ground +/- 5V offset. (programmable up to 5uS for IR21094) Internal 540ns dead-time, and programmable up to 5us with one external R resistor (IR21094) DT Lower di/dt gate driver for better noise immunity Packages Shut down input turns off both channels. Available in Lead-Free 14 Lead SOIC Description The IR2109(4)(S) are high voltage, high speed power 8 Lead SOIC MOSFET and IGBT drivers with dependent high and 14 Lead PDIP low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. The logic input is 8 Lead PDIP compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V V CC V V CC B IN IN HO TO SD SD V S LOAD up to 600V COM LO IR21094 HO IR2109 V V V CC CC B IN V IN S TO LOAD SD SD DT (Refer to Lead Assignments for correct configuration). This/These diagram(s) show V V COM SS SS R DT electrical connections only. Please refer to our LO Application Notes and DesignTips for proper circuit board layout. www.irf.com 1( ) ( ) & (PbF) S IR2109 4 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High side floating absolute voltage -0.3 625 B V High side floating supply offset voltage V - 25 V + 0.3 S B B V High side floating output voltage V - 0.3 V + 0.3 HO S B V Low side and logic fixed supply voltage -0.3 25 CC V V Low side output voltage -0.3 V + 0.3 LO CC DT Programmable dead-time pin voltage (IR21094 only) V - 0.3 V + 0.3 SS CC V Logic input voltage (IN & SD) V - 0.3 V + 0.3 IN SS CC V Logic ground (IR21094/IR21894 only) V - 25 V + 0.3 SS CC CC dV /dt Allowable offset supply voltage transient 50 V/ns S P Package power dissipation T +25 C (8 Lead PDIP) 1.0 D A (8 Lead SOIC) 0.625 W (14 lead PDIP) 1.6 (14 lead SOIC) 1.0 Rth Thermal resistance, junction to ambient (8 Lead PDIP) 125 JA (8 Lead SOIC) 200 C/W (14 lead PDIP) 75 (14 lead SOIC) 120 T Junction temperature 150 J T Storage temperature -50 150 S C T Lead temperature (soldering, 10 seconds) 300 L 2 www.irf.com