PD-91882A IR2113E6 HIGH AND LOW SIDE DRIVER Features Product Summary Floating channel designed for bootstrap operation V 600V max. OFFSET Fully operational to +600V Tolerant to negative transient voltage I +/- 2A / 2A O dV/dt immune Gate drive supply range from 10 to 20V V 10 - 20V OUT Undervoltage lockout for both channels Separate logic supply range from 5 to 20V t (typ.) 120ns & 94ns on/off Logic and power ground 5V offset CMOS Schmitt-triggered inputs with pull-down Delay Matching 20ns Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Description The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Parameter Min. Max. Units V High Side Floating Supply Absolute Voltage -0.5 V + 20 B S V High Side Floating Supply Offset Voltage 600 S V High Side Output Voltage V -0.5 V + 0.5 HO S B V V Low Side Fixed Supply Voltage -0.5 20 CC V Low Side Output Voltage -0.5 V + 0.5 LO CC V Logic Supply Voltage -0.5 V + 20 DD SS V Logic Supply Offset Voltage V - 20 V + 0.5 SS CC CC V Logic Input Voltage (HIN, LIN & SD) V - 0.5 V + 0.5 IN SS DD dV /dt Allowable Offset Supply Voltage Transient (Fig. 16) 50 V/ns S P Package Power Dissipation T = 25 C (Fig. 19) 1.6 W D A R Thermal Resistance, Junction to Ambient 125 C/W thJA T Junction Temperature -55 125 j T Storage Temperature -55 150 C S T Package Mounting Surface Temperature 300 (for 5 seconds) L Weight 0.45 (typical) g www.irf.com 1 IR2113E6 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V and V offset ratings are tested with all supplies biased at 15V differential. Typical S SS ratings at other bias conditions are shown in Figures 36 and 37. Symbol Parameter Min. Max. Units V High Side Floating Supply Absolute Voltage V + 10 V + 20 B S S V High Side Floating Supply Offset Voltage -4 600 S V High Side Output Voltage V V HO S B V Low Side Fixed Supply Voltage 10 20 V CC V Low Side Output Voltage 0 V LO CC V Logic Supply Voltage V + 5 V + 20 DD SS SS V Logic Supply Offset Voltage -5 5 SS V Logic Input Voltage (HIN, LIN & SD) V V IN SS DD Dynamic Electrical Characteristics V (V , V , V ) = 15V, and V = COM unless otherwise specified. The dynamic electrical characteristics are BIAS CC BS DD SS measured using the test circuit shown in Figure 3. Tj = -55 to Tj = 25 C 125 C Parameter Min. Typ. Max. Min. Max. Units Test Conditions t Turn-On Propagation Delay 120 150 260 V = 0V on S t Turn-Off Propagation Delay 94 125 220 V = 600V off S t Shutdown Propagation Delay 110 140 235 ns V = 600V sd S t Turn-On Rise Time 25 35 50 C = 1000pf r L t Turn-Off Fall Time 17 25 40 C = 1000pf f L Mt Delay Matching, HS & LS Turn-On/Off 20 Ht -Lt / Ht -Lt on on off off Typical Connection up to 5006 V HO V V V DD DD B HIN V HIN S TO LOAD SD SD LIN V LIN CC V COM V SS SS LO V CC 2 www.irf.com