IR2127PBF Infineon

Data Sheet No. PD60143-O ( ) ( ) IR2127 S / IR2128 S ( ) & (PbF) IR21271 S Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Application- specific gate drive range: Motor Drive: 12 to 20V (IR2127/IR2128) Automotive: 9 to 20V (IR21271) Undervoltage lockout 3.3V, 5V and 15V input logic compatible FAULT lead indicates shutdown has occured Output in phase with input (IR2127/IR21271) Output out of phase with input (IR2128) Avaliable in Lead-Free The IR2127/IR2128/IR21271(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-cur- rent in the driven power transistor and terminates the gate drive voltage. An open drain signal is pro- FAULT vided to indicate that an over-current shutdown has oc- curred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-chan- 8-Lead PDIP nel power MOSFET or IGBT in the high side or low 8-Lead SOIC side configuration which operates up to 600 volts. V V V CC CC B IN IN HO FAULT FAULT CS COM V S V V V IR2127/IR21271 CC CC B IN IN HO (Refer to Lead Assignments for correct pin FAULT FAULT CS configuration). This/These diagram(s) show COM V S electrical connections only. Please refer to our Application Notes and DesignTips for IR2128 proper circuit board layout. www.irf.com 1 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High Side Floating Supply Voltage -0.3 625 B V High Side Floating Offset Voltage V - 25 V + 0.3 S B B V High Side Floating Output Voltage V - 0.3 V + 0.3 HO S B V Logic Supply Voltage -0.3 25 V CC V Logic Input Voltage -0.3 V + 0.3 IN CC V FAULT Output Voltage -0.3 V + 0.3 FLT CC V Current Sense Voltage V - 0.3 V + 0.3 CS S B dV /dt Allowable Offset Supply Voltage Transient 50 V/ns s P Package Power Dissipation T +25 C (8 Lead DIP) 1.0 D A W (8 Lead SOIC) 0.625 Rth Thermal Resistance, Junction to Ambient (8 Lead DIP) 125 JA C/W (8 Lead SOIC) 200 T Junction Temperature 150 J T Storage Temperature -55 150 C S T Lead Temperature (Soldering, 10 seconds) 300 L Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V offset rating is tested with all supplies biased at 15V differential. S Symbol Definition Min. Max. Units V High Side Floating Supply Voltage (IR2127/IR2128) V + 12 V + 20 B S S (IR21271) V + 9 V + 20 S S V High Side Floating Offset Voltage Note 1 600 S V High Side Floating Output Voltage V V HO S B V V Logic Supply Voltage 10 20 CC V Logic Input Voltage 0 V IN CC V FAULT Output Voltage 0 V FLT CC V Current Sense Signal Voltage V V + 5 CS S S T Ambient Temperature -40 125 C A Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip S S BS DT97-3 for more details). 2 www.irf.com