IR213(6,62,63,65,66,67,68)(J&S) & PbF Data Sheet No. PD60166 revU IR2136/IR21362/IR21363/IR21365/ IR21366/IR21367/IR21368 (J&S) & (PbF) 3-PHASE BRIDGE DRIVER Packages Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V (IR2136/ IR21368), 11.5 V to 20 V (IR21362D), or 12 V to 20 V (IR21363/IR21365/IR21366/IR21367) 28-Lead SOIC 28-Lead PDIP Undervoltage lockout for all channels Over-current shutdown turns off all six drivers Independent 3 half-bridge drivers Matched propagation delay for all channels Cross-conduction prevention logic 44-Lead PLCC w/o 12 Leads Low side output out of phase with inputs. High side outputs out of phase (IR213(6,63, 65, 66, 67, 68)), or in phase (IR21362) with inputs 3.3 V logic compatible Lower di/dt gate drive for better noise immunity Externally programmable delay for automatic fault clear All parts are LEAD-FREE Feature Comparison: IR213(6,62,63,65,66,67,68) Description Part IR2136 IR21362 IR21363 IR21365 IR21366 IR21367 IR21368 The IR2136x (J&S) are high voltage, high Input Logic speed power MOSFET and IGBT drivers with HIN, LIN HIN, LIN HIN, LIN HIN, LIN HIN, LIN HIN, LIN HIN, LIN three independent high and low side Ton (typ.) 400 ns 400 ns 400 ns 400 ns 250 ns 250 ns 400 ns referenced output channels for 3-phase Toff (typ.) 380ns 380 ns 380 ns 380 ns 180 ns 180 ns 380 ns applications. Proprietary HVIC technology VIH (typ.) 2.7 V 2.7 V 2.7 V 2.7 V 2.0 V 2.0 V 2.0 V enables ruggedized monolithic construction. VIL (typ.) 1.7 V 1.7 V 1.7 V 1.7 V 1.3 V 1.3 V 1.3 V Vitrip+ 0.46 V 0.46 V 0.46 V 4.3 V 0.46 V 4.3 V 4.3 V Logic inputs are compatible with CMOS or UVCC/BS+ 8.9 V 10.4 V 11.2 V 11.2 V 11.2 V 11.2 V 8.9 V LSTTL outputs, down to 3.3 V logic. A current UVCC/BS- 8.2 V 9.4 V 11.0 V 11.0 V 11.0 V 11.0 V 8.2 V trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V. Typical Connection www.irf.com 1 IR213(6,62,63,65,66,67,68)(J&S) & PbF Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min Max Units V High side offset voltage V - 25 V + 0.3 S B 1,2,3 B 1,2,3 V High side floating supply voltage -0.3 625 B V High side floating output voltage V - 0.3 V + 0.3 HO S1,2,3 B 1,2,3 V Low side and logic fixed supply voltage -0.3 25 CC V Logic ground V - 25 V + 0.3 SS CC CC V V Low side output voltage -0.3 V + 0.3 LO1,2,3 CC Lower of V Input voltage LIN, HIN, ITRIP, EN V -0.3 (V + 15) or IN SS SS V + 0.3) CC V RCIN input voltage V -0.3 V + 0.3 RCIN SS CC FAULT output voltage V V -0.3 V + 0.3 FLT SS CC Allowable offset voltage slew rate dV/dt 50 V/ns (28 lead PDIP) 1.5 Package power dissipation (28 lead SOIC) P W D 1.6 T +25 C A (44 lead PLCC) 2.0 (28 lead PDIP) 83 Thermal resistance, junction to (28 lead SOIC) Rth C/W JA 78 ambient (44 lead PLCC) 63 T Junction temperature 150 J T Storage temperature -55 150 C S T Lead temperature (soldering, 10 seconds) 300 L Recommended Operating Conditions The input/output logic-timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute referenced to COM. The V offset ratings are tested S with all supplies biased at a 15 V differential. Symbol Definition Min Max Units IR213(6,68) V +10 V + 20 S1,2,3 S1,2,3 V High side floating supply voltage B1,2,3 IR21362 V +11.5 V + 20 S1,2,3 S1,2,3 IR213(6,63,65,66,67) V +12 V + 20 S1,2,3 S1,2,3 V High side floating supply offset voltage Note 1 600 S 1,2,3 V High side output voltage V V HO 1,2,3 S1,2,3 B1,2,3 V Low side output voltage 0 V LO1,2,3 CC V IR213(6,68) 10 20 Low side and logic fixed supply V CC IR21362 11.5 20 voltage IR213(6,63,65,66,67) 12 20 V Logic ground -5 5 SS FAULT output voltage V V V FLT SS CC V RCIN input voltage V V RCIN SS CC Note 1: Logic operational for V of (COM - 5 V) to (COM + 600 V). Logic state held for V of (COM - 5 V) to (COM V ). S S BS (Please refer to the Design Tip DT97-3 for more details). Note 2: All input pins and the ITRIP and EN pins are internally clamped with a 5.2 V zener diode. www.irf.com 2