Data Sheet No. PD60029 revJ IR2155&(PbF) (NOTE: For new designs, we recommend IRs new products IR2153 and IR21531) SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary Floating channel designed for bootstrap operation Fully operational to +600V V 600V max. OFFSET Tolerant to negative transient voltage dV/dt immune Duty Cycle 50% Undervoltage lockout Programmable oscillator frequency I +/- 210 mA / 420 mA O 1 f = V 10 - 20V OUT 1.4+(R 150) C TT Matched propagation delay for both channels Deadtime (typ.) 1.2 s Micropower supply startup current of 125 A typ. Low side output in phase with R T Package Available in Lead-Free Description The IR2155 is a high voltage, high speed, self- oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Pro- prietary HVIC and latch immune CMOS technolo- gies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an in- 8 Lead PDIP ternal deadtime designed for minimum driver cross- conduction. Propagation delays for the two channels are matched to simplify use in 50% duty MOSFET or IGBT in the high side configuration that cycle applications. The floating channel can be operates off a high voltage rail up to 600 volts. used to drive an N-channel power Typical Connection up to 600V V V CC B TO R HO LOAD T C V T S COM LO (Refer to Lead Assignment diagram for correct pin configuration) www.irf.com 1IR2155&(PbF) Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Parameter Value Symbol Definition Min. Max. Units V High Side Floating Supply Voltage -0.3 625 B V High Side Floating Supply Offset Voltage V - 25 V + 0.3 S B B V High Side Floating Output Voltage V - 0.3 V + 0.3 HO S B V V Low Side Output Voltage -0.3 V + 0.3 LO CC V R Voltage -0.3 V + 0.3 RT T CC V C Voltage -0.3 V + 0.3 CT T CC I Supply Current (Note 1) 25 CC mA I R Output Current -5 5 RT T dV /dt Allowable Offset Supply Voltage Transient 50 V/ns s P Package Power Dissipation T +25 C (8 Lead DIP) 1.0 D A W (8 Lead SOIC) 0.625 R Thermal Resistance, Junction to Ambient (8 Lead DIP) 125 JA C/W (8 Lead SOIC) 200 T Junction Temperature 150 J T Storage Temperature -55 150 C S T Lead Temperature (Soldering, 10 seconds) 300 L Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V offset rating is tested with all supplies biased at 15V differential. S Parameter Value Symbol Definition Min. Max. Units V High Side Floating Supply Absolute Voltage V + 10 V + 20 B S S V High Side Floating Supply Offset Voltage 600 S V V High Side Floating Output Voltage V V HO S B V Low Side Output Voltage 0 V LO CC I Supply Current (Note 1) 5 mA CC T Ambient Temperature -40 125 C A Note 1: Because of the IR2155s application specificity toward off-line supply systems, this IC contains a zener clamp structure between the chip V and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC CC supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value resistor connected between the chip V and the rectified line voltage and a local decoupling capacitor from CC V to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There- CC fore, this circuit should not be driven by a DC, low impedance power source of greater than V . CLAMP 2 www.irf.com