IR2156(S)PbF BALLAST CONTROL IC Features Programmable dead time Ballast control and half bridge driver in one IC DC bus under-voltage reset Programmable preheat frequency Shutdown pin with hysteresis Programmable preheat time Internal 15.6V zener clamp diode on Vcc Internal ignition ramp Micropower startup (150 A) Programmable over-current threshold Latch immunity and ESD protection Programmable run frequency Packages Description The IR2156 incorporates a high voltage half- bridge gate driver with a programmable oscillator and state diagram to form a complete ballast control IC. The IR2156 features include programmable preheat and run frequencies, programmable preheat time, programmable dead-time, and programmable over- current protection. Comprehensive protection IR2156SPBF IR2156PBF features such as protection from failure of a lamp to strike, filament failures, as well as an automatic SOICN14 PDIP14 restart function, have been included in the design. Application Diagram 1 IR2156 IR2156(S)PbF Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units VB High side floating supply voltage -0.3 625 V V - 25 V + 0.3 S High side floating supply offset voltage B B V V High side floating output voltage V - 0.3 V + 0.3 HO S B V Low side output voltage -0.3 V + 0.3 LO CC Maximum allowable output current (HO, LO) I -500 500 mA OMAX due to external power transistor miller effect V V DC VDC pin voltage -0.3 CC+0.3 V V CT CT pin voltage -0.3 CC+0.3 V V V CPH CPH pin voltage -0.3 CC+0.3 I CPH CPH pin current -5 5 mA I RPH RPH pin current -5 5 V V RPH RPH pin voltage -0.3 CC+0.3 V I RT RT pin current -5 5 mA V V RT RT pin voltage -0.3 CC+0.3 V V CS Current sense pin voltage -0.3 5.5 I CS Current sense pin current -5 5 I SD Shutdown pin current -5 5 mA I CC Supply current (Note 1) -20 20 dV/dt Allowable offset voltage slew rate -50 50 V/ns --- 1.80 Package power dissipation T +25C (14-Pin DIP) A PD W P = (T -T )/RJA (14-Pin SOIC) D JMAX A --- 1.40 Thermal resistance, junction to ambient (14-Pin DIP) - - - 70 R JA C/W (14-Pin SOIC) --- 82 T Junction temperature -55 150 J C TS Storage temperature -55 150 T Lead temperature (soldering, 10 seconds) --- 300 L Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. 2