IR2183STRPBF Infineon

Data Sheet No. PD60173 rev.H ( )( ) ( ) IR2183 4 S & PbF HALF-BRIDGE DRIVER Features Packages Floating channel designed for bootstrap operation Fully operational to +600V 14-Lead PDIP Tolerant to negative transient voltage IR21834 8-Lead PDIP dV/dt immune IR2183 Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V and 5V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity 8-Lead SOIC 14-Lead SOIC Output source/sink current capability 1.4A/1.8A IR2183S IR21834S Also available LEAD-FREE (PbF) Description IR2181/IR2183/IR2184 Feature Comparison The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT % & drivers with dependent high and low side referenced output channels. Pro- *797 & 79 &** prietary HVIC and latch immune *797: & *79 < CMOS technologies enable rugge- & 79 &** *79 : >: < & dized monolithic construction. The *79: < & 9 &* logic input is compatible with standard *79:: >: < & CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection IR2183 IR21834 (Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com 1( )( ) ( ) IR2183 4 S & PbF Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V High side floating absolute voltage -0.3 625 B V High side floating supply offset voltage V - 25 V + 0.3 S B B V High side floating output voltage V - 0.3 V + 0.3 HO S B V Low side and logic fixed supply voltage -0.3 25 CC V V Low side output voltage -0.3 V + 0.3 LO CC DT Programmable dead-time pin voltage (IR21834 only) V - 0.3 V + 0.3 SS CC V Logic input voltage (HIN & )V - 0.3 V + 5 IN SS SS V Logic ground (IR21834 only) V - 25 V + 0.3 SS CC CC dV /dt Allowable offset supply voltage transient 50 V/ns S P Package power dissipation T +25C (8-lead PDIP) 1.0 D A (8-lead SOIC) 0.625 W (14-lead PDIP) 1.6 (14-lead SOIC) 1.0 Rth Thermal resistance, junction to ambient (8-lead PDIP) 125 JA (8-lead SOIC) 200 C/W (14-lead PDIP) 75 (14-lead SOIC) 120 T Junction temperature 150 J T Storage temperature -50 150 C S T Lead temperature (soldering, 10 seconds) 300 L Recommended Operating Conditions The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V and V offset rating are tested with all supplies biased at 15V differential. S SS Symbol Definition Min. Max. Units VB High side floating supply absolute voltage V + 10 V + 20 S S V High side floating supply offset voltage Note 1 600 S V High side floating output voltage V V HO S B V Low side and logic fixed supply voltage 10 20 CC V V Low side output voltage 0 V LO CC V Logic input voltage (HIN & )V V + 4 IN SS SS DT Programmable dead-time pin voltage (IR21834 only) V V SS CC V Logic ground (IR21834 only) -5 5 SS T Ambient temperature -40 125 C A Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip S S BS DT97-3 for more details). Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode. 2 www.irf.com